We develop a general numerical method for investigating nonlinear guided-wave phenomena in semiconductors including the effects of carrier diffusion. The macroscopic field evolution is handled by using the beam-propagation method, and the microscopic semiconductor response is obtained from a previously developed plasma theory. Coupled field-matter equations are given and solved numerically for a nonlinear directional coupler by using the material parameters of the room-temperature, bulk semiconductors GaAs and CdSe.
|Original language||English (US)|
|Number of pages||9|
|Journal||Journal of the Optical Society of America B: Optical Physics|
|State||Published - Aug 1989|
ASJC Scopus subject areas
- Statistical and Nonlinear Physics
- Atomic and Molecular Physics, and Optics