Observation of an oxygen resonance in reflectivity from weakly absorbing thin silicon layers

S. O. Sari, P. Hollingsworth Smith, H. S. Gurev

Research output: Contribution to journalArticle

5 Scopus citations

Abstract

A bulk polariton has been discovered in silicon films deposited by silane vapor deposition on substrates of highly reflecting silver. From reflectivity measurements, resonances at 8.3 and 10 μm are examined using a simple model. Properties of the observed transitions, due to impurity oxygen in silicon, have been determined by an analysis of our spectra for semiconductor layers of increasing thickness between 1.5 and 6 μm.

Original languageEnglish (US)
Pages (from-to)4817-4821
Number of pages5
JournalPhysical Review B
Volume15
Issue number10
DOIs
StatePublished - 1977

ASJC Scopus subject areas

  • Condensed Matter Physics

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