Observation of an oxygen resonance in reflectivity from weakly absorbing thin silicon layers

S. O. Sari, Peter Smith, H. S. Gurev

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

A bulk polariton has been discovered in silicon films deposited by silane vapor deposition on substrates of highly reflecting silver. From reflectivity measurements, resonances at 8.3 and 10 μm are examined using a simple model. Properties of the observed transitions, due to impurity oxygen in silicon, have been determined by an analysis of our spectra for semiconductor layers of increasing thickness between 1.5 and 6 μm.

Original languageEnglish (US)
Pages (from-to)4817-4821
Number of pages5
JournalPhysical Review B
Volume15
Issue number10
DOIs
StatePublished - 1977

Fingerprint

Silicon
silicon films
silanes
polaritons
silver
vapor deposition
Oxygen
reflectance
Silanes
impurities
Vapor deposition
silicon
oxygen
Silver
Impurities
Semiconductor materials
Substrates

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Observation of an oxygen resonance in reflectivity from weakly absorbing thin silicon layers. / Sari, S. O.; Smith, Peter; Gurev, H. S.

In: Physical Review B, Vol. 15, No. 10, 1977, p. 4817-4821.

Research output: Contribution to journalArticle

@article{35901d82b259414da7c26e2b29fbf5d6,
title = "Observation of an oxygen resonance in reflectivity from weakly absorbing thin silicon layers",
abstract = "A bulk polariton has been discovered in silicon films deposited by silane vapor deposition on substrates of highly reflecting silver. From reflectivity measurements, resonances at 8.3 and 10 μm are examined using a simple model. Properties of the observed transitions, due to impurity oxygen in silicon, have been determined by an analysis of our spectra for semiconductor layers of increasing thickness between 1.5 and 6 μm.",
author = "Sari, {S. O.} and Peter Smith and Gurev, {H. S.}",
year = "1977",
doi = "10.1103/PhysRevB.15.4817",
language = "English (US)",
volume = "15",
pages = "4817--4821",
journal = "Physical Review B-Condensed Matter",
issn = "0163-1829",
publisher = "American Institute of Physics Publising LLC",
number = "10",

}

TY - JOUR

T1 - Observation of an oxygen resonance in reflectivity from weakly absorbing thin silicon layers

AU - Sari, S. O.

AU - Smith, Peter

AU - Gurev, H. S.

PY - 1977

Y1 - 1977

N2 - A bulk polariton has been discovered in silicon films deposited by silane vapor deposition on substrates of highly reflecting silver. From reflectivity measurements, resonances at 8.3 and 10 μm are examined using a simple model. Properties of the observed transitions, due to impurity oxygen in silicon, have been determined by an analysis of our spectra for semiconductor layers of increasing thickness between 1.5 and 6 μm.

AB - A bulk polariton has been discovered in silicon films deposited by silane vapor deposition on substrates of highly reflecting silver. From reflectivity measurements, resonances at 8.3 and 10 μm are examined using a simple model. Properties of the observed transitions, due to impurity oxygen in silicon, have been determined by an analysis of our spectra for semiconductor layers of increasing thickness between 1.5 and 6 μm.

UR - http://www.scopus.com/inward/record.url?scp=35949040338&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=35949040338&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.15.4817

DO - 10.1103/PhysRevB.15.4817

M3 - Article

AN - SCOPUS:35949040338

VL - 15

SP - 4817

EP - 4821

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 0163-1829

IS - 10

ER -