Observation of interface band bending on GaAs/AlAs heterostructures by scanning tunneling microscopy

Dror Sarid, Xiaowei Yao, Richard K. Workman, Charles A. Peterson, Mahmoud Fallahi

Research output: Contribution to journalConference articlepeer-review


The electronic structure at the interface of GaAs/AlAs multilayers grown by molecular beam epitaxy is investigated on the (110) surface using scanning tunneling microscopy. The valence band bending, which is produced by an interface dipole layer, is observed from cross-sectional profiles exhibiting spike structures. It is found that the transition region of the AlAs/GaAs interface (3.0-4.0 nm) is smaller than that of the GaAs/AlAs interface (4.0-5.0 nm). Similar spike structures showing a transition region of 3.5-4.5 nm are also observed at the GaAs/Al0.6Ga0.4As interface.

Original languageEnglish (US)
Pages (from-to)51-58
Number of pages8
JournalProceedings of SPIE - The International Society for Optical Engineering
StatePublished - Dec 1 1998
EventFabrication, Testing and Reliability of Semiconductor Lasers III - San Jose, CA, United States
Duration: Jan 29 1998Jan 30 1998


  • Band bending
  • III-V heterostructures
  • Interface
  • Scanning tunneling microscopy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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