Observation of the dynamic nonlinear optical skin effect in a semiconductor

A. Schulzgen, S. Hughes, N. Peyghambarian

Research output: Contribution to conferencePaper

Abstract

A Doppler-shifted self-reflected wave is demonstrated through single beam reflection experiments and degenerated pump-probe reflection measurements. Using 150-fs pulses from the second harmonic of a modelocked Ti:sapphire laser, ZnSe is excited to resonant ground state exciton transition at 77 K. At low intensities the pronounced ground state exciton feature can be observed. The excitonic resonance disappears with increasing irradiance. However, the reflected pulse spectrum never resembles that of the incident pulse as it is expected for only stationary changes of the dielectric constant.

Original languageEnglish (US)
Pages219-220
Number of pages2
StatePublished - Jan 1 1997
EventProceedings of the 1997 Conference on Quantum Electronics and Laser Science, QELS - Baltimore, MD, USA
Duration: May 18 1997May 23 1997

Other

OtherProceedings of the 1997 Conference on Quantum Electronics and Laser Science, QELS
CityBaltimore, MD, USA
Period5/18/975/23/97

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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  • Cite this

    Schulzgen, A., Hughes, S., & Peyghambarian, N. (1997). Observation of the dynamic nonlinear optical skin effect in a semiconductor. 219-220. Paper presented at Proceedings of the 1997 Conference on Quantum Electronics and Laser Science, QELS, Baltimore, MD, USA, .