ON THE DYNAMICS OF THE PLASMA PHASE TRANSITION IN HIGHLY EXCITED DIRECT GAP SEMICONDUCTORS.

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The temporal behavior of the system of electronic excitations in highly excited direct gap semiconductors is treated within a hydrodynamic model. A functional Fokker-Planck equation for the probability distribution of the local density of electron-hole (e-h) pairs is established taking into account the diffusion of e-h pairs due to the local chemical potential as well as recombination losses due to the finite e-h pair lifetime and generation of e-h pairs by external laser excitation. The results show that for e-h pair densities inside the instability region of the thermodynamic chemical potential no true phase separation into an e-h pair gas phase and an e-h liquid phase takes place.

Original languageEnglish (US)
Pages (from-to)687-695
Number of pages9
JournalPhysica Status Solidi (B) Basic Research
Volume103
Issue number2
StatePublished - Feb 1981
Externally publishedYes

Fingerprint

Phase transitions
Semiconductor materials
Plasmas
Electrons
Chemical potential
Fokker Planck equation
Laser excitation
Fokker-Planck equation
Phase separation
Probability distributions
excitation
liquid phases
Hydrodynamics
Gases
hydrodynamics
Thermodynamics
vapor phases
life (durability)
thermodynamics
Liquids

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

ON THE DYNAMICS OF THE PLASMA PHASE TRANSITION IN HIGHLY EXCITED DIRECT GAP SEMICONDUCTORS. / Koch, Stephan W.

In: Physica Status Solidi (B) Basic Research, Vol. 103, No. 2, 02.1981, p. 687-695.

Research output: Contribution to journalArticle

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