On the Dynamics of the Plasma Phase Transition in Highly Excited Direct Gap Semiconductors

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2 Scopus citations


The temporal behaviour of the system of electronic excitations in highly excited direct gap semiconductors is treated within a hydrodynamic model. A functional Fokker‐Planck equation for the probability distribution of the local density of electron–hole (e–h) pairs is established taking into account the diffusion of e–h pairs due to the local chemical potential as well as recombination losses due to the finite e–h pair lifetime and generation of e–h pairs by external laser excitation. Several time dependent moments of the probability distribution functional are calculated together with the structure factor, i.e. the Fourier transform of the two‐point density correlation function. The results show that for e‐h pair densities inside the instability region of the thermodynamic chemical potential no true phase separation into an e–h pair gas phase and an e–h liquid phase takes place.

Original languageEnglish (US)
Pages (from-to)687-695
Number of pages9
Journalphysica status solidi (b)
Issue number2
StatePublished - Feb 1 1981

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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