Abstract
We show that the electron-hole droplet nucleation can be a first- or second-order nonequilibrium phase transition, depending on the lifetime of the electronic excitations. The phase transition is known to be of first order for Ge, but for GaAs and CdS it is shown to be of second order.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 250-252 |
| Number of pages | 3 |
| Journal | Physics Letters A |
| Volume | 74 |
| Issue number | 3-4 |
| DOIs | |
| State | Published - Nov 12 1979 |
ASJC Scopus subject areas
- Physics and Astronomy(all)
Fingerprint Dive into the research topics of 'On the electron-hole plasma phase transition in direct and indirect gap semiconductors'. Together they form a unique fingerprint.
Cite this
Koch, S. W., & Haug, H. (1979). On the electron-hole plasma phase transition in direct and indirect gap semiconductors. Physics Letters A, 74(3-4), 250-252. https://doi.org/10.1016/0375-9601(79)90785-0