TY - JOUR
T1 - On the electron-hole plasma phase transition in direct and indirect gap semiconductors
AU - Koch, S. W.
AU - Haug, H.
PY - 1979/11/12
Y1 - 1979/11/12
N2 - We show that the electron-hole droplet nucleation can be a first- or second-order nonequilibrium phase transition, depending on the lifetime of the electronic excitations. The phase transition is known to be of first order for Ge, but for GaAs and CdS it is shown to be of second order.
AB - We show that the electron-hole droplet nucleation can be a first- or second-order nonequilibrium phase transition, depending on the lifetime of the electronic excitations. The phase transition is known to be of first order for Ge, but for GaAs and CdS it is shown to be of second order.
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U2 - 10.1016/0375-9601(79)90785-0
DO - 10.1016/0375-9601(79)90785-0
M3 - Article
AN - SCOPUS:15444365754
VL - 74
SP - 250
EP - 252
JO - Physics Letters, Section A: General, Atomic and Solid State Physics
JF - Physics Letters, Section A: General, Atomic and Solid State Physics
SN - 0375-9601
IS - 3-4
ER -