On the electron-hole plasma phase transition in direct and indirect gap semiconductors

S. W. Koch, H. Haug

Research output: Contribution to journalArticle

8 Scopus citations

Abstract

We show that the electron-hole droplet nucleation can be a first- or second-order nonequilibrium phase transition, depending on the lifetime of the electronic excitations. The phase transition is known to be of first order for Ge, but for GaAs and CdS it is shown to be of second order.

Original languageEnglish (US)
Pages (from-to)250-252
Number of pages3
JournalPhysics Letters A
Volume74
Issue number3-4
DOIs
StatePublished - Nov 12 1979

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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