On the observation of dispersion in tunable second-order nonlinearities of silicon-rich nitride thin films

Hung Hsi Lin, Rajat Sharma, Alex Friedman, Benjamin M. Cromey, Felipe Vallini, Matthew W. Puckett, Khanh Kieu, Yeshaiahu Fainman

Research output: Contribution to journalArticle

Abstract

We present experimental results on second-harmonic generation in non-stoichiometric, silicon-rich nitride films. The as-deposited film presents a second-order nonlinear coefficient, or χ(2), as high as 8 pm/V. This value can be widely tuned using the electric field induced second harmonic effect, and a maximum value of 22.7 pm/V was achieved with this technique. We further illustrate that the second-order nonlinear coefficient exhibited by these films can be highly dispersive in nature and require further study and analysis to evaluate their viability for in-waveguide applications at telecommunication wavelengths.

Original languageEnglish (US)
Article number036101
JournalAPL Photonics
Volume4
Issue number3
DOIs
StatePublished - Mar 1 2019

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Computer Networks and Communications

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    Lin, H. H., Sharma, R., Friedman, A., Cromey, B. M., Vallini, F., Puckett, M. W., Kieu, K., & Fainman, Y. (2019). On the observation of dispersion in tunable second-order nonlinearities of silicon-rich nitride thin films. APL Photonics, 4(3), [036101]. https://doi.org/10.1063/1.5053704