Onset of sidemode buildup in semiconductor lasers

Murray Sargent, Stephan W. Koch, Weng W. Chow

Research output: Contribution to conferencePaper

Abstract

Certain aspects of the multimode problem have been treated by extending the work of M. Sargent et al. (1988) to beat frequencies as big as or bigger than the carrier-carrier scattering rate. For those relatively large frequencies, the individual k-dependent carrier densities undergo pulsations that are too fast to allow the carriers to be described by quasi-Fermi-Dirac distributions. In general the carrier-density evolutions are described by a Boltzmann scattering equation. The carrier-carrier scattering contributions in this equation have been approximated by a simple relaxation term. Using this approach, sidemode gain and coupling coefficients that include hole burning and population pulsation contributions very similar to those for inhomogeneously broadened two-level systems have been found.

Original languageEnglish (US)
Number of pages1
StatePublished - Dec 1 1990
Event17th International Conference on Quantum Electronics - IQEC '90 - Anaheim, CA, USA
Duration: May 21 1990May 25 1990

Other

Other17th International Conference on Quantum Electronics - IQEC '90
CityAnaheim, CA, USA
Period5/21/905/25/90

ASJC Scopus subject areas

  • Engineering(all)

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    Sargent, M., Koch, S. W., & Chow, W. W. (1990). Onset of sidemode buildup in semiconductor lasers. Paper presented at 17th International Conference on Quantum Electronics - IQEC '90, Anaheim, CA, USA, .