Opportunities and challenges in electrochemical-mechanical planarization (ECMP)

A. Muthukumaran, N. Venkataraman, S. Raghavan, M. Keswani

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Electrochemical-mechanical planarization is challenging conventional CMP for use in the planarization of certain metallic films, especially copper. Because of the complex interplay between electrochemical and mechanical factors, and the evolution of newer metals such as ruthenium as barrier materials, the ECMP field is wide open for research in the area of consumables. In this paper, recent work in the area of ECMP of copper and tantalum is reviewed, with special reference to chemical formulations. Opportunities in ECMP of ruthenium are highlighted through a discussion of its chemistry and electrochemistry.

Original languageEnglish (US)
Title of host publicationSemiconductor Technology, ISTC 2008 - Proceedings of the 7th International Conference on Semiconductor Technology
Pages511-517
Number of pages7
StatePublished - Sep 29 2008
Event7th International Conference on Semiconductor Technology, ISTC 2008 - Shanghai, China
Duration: Mar 15 2008Mar 17 2008

Publication series

NameProceedings - Electrochemical Society
VolumePV 2008-1

Other

Other7th International Conference on Semiconductor Technology, ISTC 2008
CountryChina
CityShanghai
Period3/15/083/17/08

Keywords

  • Copper
  • Electrochemical-mechanical planarization
  • Ruthenium
  • Tantalum

ASJC Scopus subject areas

  • Electrochemistry

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