OPS laser EPI design for different wavelengths

J. V. Moloney, J. Hader, H. Li, Y. Kaneda, T. S. Wang, M. Yarborough, S. W. Koch, W. Stolz, B. Kunert, C. Bueckers, S. Chaterjee, G. Hardesty

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Design of optimized semiconductor optically-pumped semiconductor lasers (OPSL s) depends on many ingredients starting from the quantum wells, barrier and cladding layers all the way through to the resonant-periodic gain (RPG) and high reflectivity Bragg mirror (DBR) making up the OPSL active mirror. Accurate growth of the individual layers making up the RPG region is critical if performance degradation due to cavity misalignment is to be avoided. Optimization of the RPG+DBR structure requires knowledge of the heat generation and heating sinking of the active mirror. Nonlinear Control Strategies SimuLase TM software, based on rigorous many-body calculations of the semiconductor optical response, allows for quantum well and barrier optimization by correlating low intensity photoluminescence spectra computed for the design, with direct experimentally measured wafer-level edge and surface PL spectra. Consequently, an OPSL device optimization procedure ideally requires a direct iterative interaction between designer and grower. In this article, we discuss the application of the many-body microscopic approach to OPSL devices lasing at 850nm, 1040nm and 2μm. The latter device involves and application of the many-body approach to mid-IR OPSLs based on antimonide materials. Finally we will present results on based on structural modifications of the epitaxial structure and/or novel material combinations that offer the potential to extend OPSL technology to new wavelength ranges.

Original languageEnglish (US)
Title of host publicationSolid State Lasers XVIII
Subtitle of host publicationTechnology and Devices
DOIs
StatePublished - Jun 15 2009
EventSolid State Lasers XVIII: Technology and Devices - San Jose, CA, United States
Duration: Jan 25 2009Jan 29 2009

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume7193
ISSN (Print)0277-786X

Other

OtherSolid State Lasers XVIII: Technology and Devices
CountryUnited States
CitySan Jose, CA
Period1/25/091/29/09

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Keywords

  • Microscopic theory
  • Photoluminescence spectra
  • Recombination losses
  • Semiconductor gain

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Moloney, J. V., Hader, J., Li, H., Kaneda, Y., Wang, T. S., Yarborough, M., Koch, S. W., Stolz, W., Kunert, B., Bueckers, C., Chaterjee, S., & Hardesty, G. (2009). OPS laser EPI design for different wavelengths. In Solid State Lasers XVIII: Technology and Devices [719313] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 7193). https://doi.org/10.1117/12.814934