Optical characterization of semiconductor microcavities by spatially resolved imaging and resonant Rayleigh scattering

M. Gurioli, F. Bogani, D. S. Wiersma, P. Roussignol, G. Cassabois, Galina Khitrova, H. Gibbs

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

It is shown that images of the coherent emission from microcavity (MC) surfaces can be used for the characterization of both intrinsic and extrinsic optical properties. The method allows one to overcome the well-known problem of inhomogeneous broadening due to the MC wedge. In addition, the presence of static disorder associated with dielectric fluctuations in a Bragg reflector is observed. This is also confirmed by resonant Rayleigh scattering measurement and it is attributed to misfit dislocations induced by the large thickness of the mismatched AlGaAs alloy in the Bragg mirrors.

Original languageEnglish (US)
Pages (from-to)363-367
Number of pages5
JournalPhysica Status Solidi (A) Applied Research
Volume190
Issue number2
DOIs
StatePublished - 2002

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Rayleigh scattering
Microcavities
Bragg reflectors
Semiconductor materials
Imaging techniques
Dislocations (crystals)
wedges
aluminum gallium arsenides
Optical properties
disorders
optical properties

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Optical characterization of semiconductor microcavities by spatially resolved imaging and resonant Rayleigh scattering. / Gurioli, M.; Bogani, F.; Wiersma, D. S.; Roussignol, P.; Cassabois, G.; Khitrova, Galina; Gibbs, H.

In: Physica Status Solidi (A) Applied Research, Vol. 190, No. 2, 2002, p. 363-367.

Research output: Contribution to journalArticle

Gurioli, M. ; Bogani, F. ; Wiersma, D. S. ; Roussignol, P. ; Cassabois, G. ; Khitrova, Galina ; Gibbs, H. / Optical characterization of semiconductor microcavities by spatially resolved imaging and resonant Rayleigh scattering. In: Physica Status Solidi (A) Applied Research. 2002 ; Vol. 190, No. 2. pp. 363-367.
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