Optical excitation dependent emission properties of InGaN quantum wells

Research output: Contribution to journalArticle

Abstract

Fully microscopic many-body calculations are used to study the carrier and polarization dynamics in optically excited InGaN quantum wells. For long-pulse or stationary (CW) optical excitation conditions, it is shown that the strong excitation-induced dephasing due to the excited charge carriers leads to an effective spectral width of the created polarization in the range of several hundred meV. The subsequent polarization to population conversion results in broad carrier distributions spreading over energy regions well above and below the central excitation energy. Without invoking Auger transitions, it is shown that this model can explain experiments observing ultraviolet quantum-well photoluminescence after resonant CW excitation of a neighboring green emitting quantum well Binder et al. (Appl. Phys. Lett. 103:071108, 2013).

Original languageEnglish (US)
Article number681
Pages (from-to)425-431
Number of pages7
JournalJournal of Computational Electronics
Volume14
Issue number2
DOIs
StatePublished - Apr 7 2015

Fingerprint

InGaN
Photoexcitation
Quantum Well
Semiconductor quantum wells
Excitation
quantum wells
Polarization
Dependent
excitation
polarization
Excitation energy
Electron transitions
Charge carriers
Photoluminescence
Energy
Ultraviolet
charge carriers
Charge
photoluminescence
energy

Keywords

  • Carrier scattering
  • Efficiency droop
  • InGaN
  • LED
  • Microscopic theory
  • Optical excitation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials
  • Modeling and Simulation

Cite this

Optical excitation dependent emission properties of InGaN quantum wells. / Hader, Jorg; Moloney, Jerome V; Koch, Stephan W.

In: Journal of Computational Electronics, Vol. 14, No. 2, 681, 07.04.2015, p. 425-431.

Research output: Contribution to journalArticle

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