Optical gain and transient nonlinearities in Ge quantum wells

S. Chatterjee, C. Lange, N. S. Köster, H. Sigg, D. Chrastina, G. Isella, H. Von Känel, M. Schäfer, M. Kira, S. W. Koch

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Ultrafast carrier dynamics of Ge/SiGe quantum wells grown on a Si substrate are investigated using pump-probe spectroscopy. Optical gain and population inversion are obtained on a femtosecond time scale. A microscopic theory supports the results.

Original languageEnglish (US)
Title of host publication2009 6th IEEE International Conference on Group IV Photonics, GFP '09
Pages268-270
Number of pages3
DOIs
StatePublished - Dec 1 2009
Event2009 6th IEEE International Conference on Group IV Photonics, GFP '09 - San Francisco, CA, United States
Duration: Sep 9 2009Sep 11 2009

Publication series

NameIEEE International Conference on Group IV Photonics GFP
ISSN (Print)1949-2081

Other

Other2009 6th IEEE International Conference on Group IV Photonics, GFP '09
CountryUnited States
CitySan Francisco, CA
Period9/9/099/11/09

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials

Fingerprint Dive into the research topics of 'Optical gain and transient nonlinearities in Ge quantum wells'. Together they form a unique fingerprint.

  • Cite this

    Chatterjee, S., Lange, C., Köster, N. S., Sigg, H., Chrastina, D., Isella, G., Von Känel, H., Schäfer, M., Kira, M., & Koch, S. W. (2009). Optical gain and transient nonlinearities in Ge quantum wells. In 2009 6th IEEE International Conference on Group IV Photonics, GFP '09 (pp. 268-270). [5338362] (IEEE International Conference on Group IV Photonics GFP). https://doi.org/10.1109/GROUP4.2009.5338362