Optical gain and transient nonlinearities in Ge quantum wells

S. Chatterjee; C. Lange; N. S. Köster; H. Sigg; D. Chrastina; G. Isella; H. Von Känel; M. Schäfer; M. Kira; S. W. Koch

doi:10.1109/GROUP4.2009.5338362

Optical gain and transient nonlinearities in Ge quantum wells

S. Chatterjee, C. Lange, N. S. Köster, H. Sigg, D. Chrastina, G. Isella, H. Von Känel, M. Schäfer, M. Kira, S. W. Koch

Optical Sciences, College of

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Ultrafast carrier dynamics of Ge/SiGe quantum wells grown on a Si substrate are investigated using pump-probe spectroscopy. Optical gain and population inversion are obtained on a femtosecond time scale. A microscopic theory supports the results.

Original language	English (US)
Title of host publication	2009 6th IEEE International Conference on Group IV Photonics, GFP '09
Pages	268-270
Number of pages	3
DOIs	https://doi.org/10.1109/GROUP4.2009.5338362
State	Published - Dec 1 2009
Event	2009 6th IEEE International Conference on Group IV Photonics, GFP '09 - San Francisco, CA, United States Duration: Sep 9 2009 → Sep 11 2009

Publication series

Name	IEEE International Conference on Group IV Photonics GFP
ISSN (Print)	1949-2081

Other

Other	2009 6th IEEE International Conference on Group IV Photonics, GFP '09
Country/Territory	United States
City	San Francisco, CA
Period	9/9/09 → 9/11/09

ASJC Scopus subject areas

Electrical and Electronic Engineering
Ceramics and Composites
Electronic, Optical and Magnetic Materials

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10.1109/GROUP4.2009.5338362

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Chatterjee, S., Lange, C., Köster, N. S., Sigg, H., Chrastina, D., Isella, G., Von Känel, H., Schäfer, M., Kira, M., & Koch, S. W. (2009). Optical gain and transient nonlinearities in Ge quantum wells. In 2009 6th IEEE International Conference on Group IV Photonics, GFP '09 (pp. 268-270). [5338362] (IEEE International Conference on Group IV Photonics GFP). https://doi.org/10.1109/GROUP4.2009.5338362

Optical gain and transient nonlinearities in Ge quantum wells. / Chatterjee, S.; Lange, C.; Köster, N. S.; Sigg, H.; Chrastina, D.; Isella, G.; Von Känel, H.; Schäfer, M.; Kira, M.; Koch, S. W.

2009 6th IEEE International Conference on Group IV Photonics, GFP '09. 2009. p. 268-270 5338362 (IEEE International Conference on Group IV Photonics GFP).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Chatterjee, S, Lange, C, Köster, NS, Sigg, H, Chrastina, D, Isella, G, Von Känel, H, Schäfer, M, Kira, M & Koch, SW 2009, Optical gain and transient nonlinearities in Ge quantum wells. in 2009 6th IEEE International Conference on Group IV Photonics, GFP '09., 5338362, IEEE International Conference on Group IV Photonics GFP, pp. 268-270, 2009 6th IEEE International Conference on Group IV Photonics, GFP '09, San Francisco, CA, United States, 9/9/09. https://doi.org/10.1109/GROUP4.2009.5338362

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abstract = "Ultrafast carrier dynamics of Ge/SiGe quantum wells grown on a Si substrate are investigated using pump-probe spectroscopy. Optical gain and population inversion are obtained on a femtosecond time scale. A microscopic theory supports the results.",

author = "S. Chatterjee and C. Lange and K{\"o}ster, {N. S.} and H. Sigg and D. Chrastina and G. Isella and {Von K{\"a}nel}, H. and M. Sch{\"a}fer and M. Kira and Koch, {S. W.}",

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AU - Lange, C.

AU - Köster, N. S.

AU - Sigg, H.

AU - Chrastina, D.

AU - Isella, G.

AU - Von Känel, H.

AU - Schäfer, M.

AU - Kira, M.

AU - Koch, S. W.

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ER -

Optical gain and transient nonlinearities in Ge quantum wells

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ASJC Scopus subject areas

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