Optical injection modulation of quantum-dash semiconductor lasers by intra-cavity stimulated Raman scattering

C. Chen, G. Ding, B. S. Ooi, L. F. Lester, A. Helmy, Thomas L Koch, J. C M Hwang

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We report the optical injection modulation of semiconductor lasers by intra-cavity stimulated Raman scattering. This mechanism manifests itself as sharply enhanced modulation bandwidth in InAs/InGaA1As/InP quantum-dash lasers when the injected photons are 33 ± 3 meV more energetic than the lasing photons. Raman scattering measurements on the quantum-dash structure and rate equation models strongly support direct gain modulation by stimulated Raman scattering. We believe this new bandwidth enhancement mechanism may have important applications in optical communication and signal processing.

Original languageEnglish (US)
Pages (from-to)6211-6219
Number of pages9
JournalOptics Express
Volume18
Issue number6
DOIs
StatePublished - Mar 15 2010
Externally publishedYes

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semiconductor lasers
Raman spectra
injection
modulation
cavities
bandwidth
photons
optical communication
lasing
signal processing
augmentation
lasers

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Cite this

Optical injection modulation of quantum-dash semiconductor lasers by intra-cavity stimulated Raman scattering. / Chen, C.; Ding, G.; Ooi, B. S.; Lester, L. F.; Helmy, A.; Koch, Thomas L; Hwang, J. C M.

In: Optics Express, Vol. 18, No. 6, 15.03.2010, p. 6211-6219.

Research output: Contribution to journalArticle

Chen, C. ; Ding, G. ; Ooi, B. S. ; Lester, L. F. ; Helmy, A. ; Koch, Thomas L ; Hwang, J. C M. / Optical injection modulation of quantum-dash semiconductor lasers by intra-cavity stimulated Raman scattering. In: Optics Express. 2010 ; Vol. 18, No. 6. pp. 6211-6219.
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