Optical limiting in Bragg-spaced semiconductor quantum wells

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

We propose a new mechanism for optical limiting in which nonlinear absorption and nonlinear reflection act in concert. The mechanism is based on the light-induced shift of the band gap in Bragg-spaced semiconductor quantum wells.

Original languageEnglish (US)
Title of host publication2008 Conference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS
DOIs
StatePublished - Sep 15 2008
EventConference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS 2008 - San Jose, CA, United States
Duration: May 4 2008May 9 2008

Publication series

Name2008 Conference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS

Other

OtherConference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS 2008
CountryUnited States
CitySan Jose, CA
Period5/4/085/9/08

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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    Nguyen, D. T., Kwong, N. H., Binder, R., Norwood, R., & Peyghambarian, N. (2008). Optical limiting in Bragg-spaced semiconductor quantum wells. In 2008 Conference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS [4552297] (2008 Conference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS). https://doi.org/10.1109/CLEO.2008.4552297