Optical limiting in Bragg-spaced semiconductor quantum wells

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

We propose a new mechanism for optical limiting in which nonlinear absorption and nonlinear reflection act in concert. The mechanism is based on the light-induced shift of the band gap in Bragg-spaced semiconductor quantum wells.

Original languageEnglish (US)
Title of host publication2008 Conference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS
DOIs
Publication statusPublished - 2008
EventConference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS 2008 - San Jose, CA, United States
Duration: May 4 2008May 9 2008

Other

OtherConference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS 2008
CountryUnited States
CitySan Jose, CA
Period5/4/085/9/08

    Fingerprint

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Nguyen, D. T., Kwong, N-H., Binder, R., Norwood, R. A., & Peyghambarian, N. N. (2008). Optical limiting in Bragg-spaced semiconductor quantum wells. In 2008 Conference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS [4552297] https://doi.org/10.1109/CLEO.2008.4552297