Optical near-field excitation at the semiconductor band edge: Field distributions, anisotropic transitions and quadrupole enhancement

A. Von Der Heydt, A. Knorr, B. Hanewinkel, Stephan W Koch

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The optical near-field response of a three dimensional subwavelength aperture-semiconductor system is analyzed within a finite difference time domain scheme for Maxwell's and excitonic material equations. The analysis includes the field modification due to the high refractive index environment and the excitonic response to a near-field distribution. The resonant optical response is illustrated for anisotropic dipole transitions in quantum wells and the enhancement of the quadrupole transition in materials with dipole forbidden interband transitions.

Original languageEnglish (US)
Pages (from-to)7831-7838
Number of pages8
JournalThe Journal of Chemical Physics
Volume112
Issue number18
StatePublished - May 8 2000
Externally publishedYes

Fingerprint

near fields
quadrupoles
Semiconductor materials
augmentation
Semiconductor quantum wells
dipoles
excitation
Refractive index
forbidden transitions
apertures
quantum wells
refractivity

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Cite this

Optical near-field excitation at the semiconductor band edge : Field distributions, anisotropic transitions and quadrupole enhancement. / Von Der Heydt, A.; Knorr, A.; Hanewinkel, B.; Koch, Stephan W.

In: The Journal of Chemical Physics, Vol. 112, No. 18, 08.05.2000, p. 7831-7838.

Research output: Contribution to journalArticle

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