Optical near-field response of semiconductor quantum dots

B. Hanewinkel, A. Knorr, P. Thomas, S. Koch

Research output: Contribution to journalArticlepeer-review

71 Scopus citations


The near-field response of optically excited semiconductor quantum dots is theoretically investigated for the collection and illumination mode of a scanning near-field optical microscope. The study includes resolution, spectral line shape, and field distributions of single and interacting dots. It is shown that in contrast to near-field excitation of molecules with large dipole moments, the line shape and position of typical semiconductor quantum dots can be determined without a disturbance if realistic values for the intrinsic linewidth are assumed. The comparison of regular and irregular quantum-dot distributions yields characteristic signatures for disordered arrays, necessary to understand the optical response of realistic semiconductor quantum dot samples.

Original languageEnglish (US)
Pages (from-to)13715-13725
Number of pages11
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number20
StatePublished - 1997

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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