Optical properties determination at 10.6 μm of thin semiconducting layers

C. Falco; J. Botineau; A. Azema; M. de Micheli; D. B. Ostrowsky

doi:10.1007/BF00617709

Optical properties determination at 10.6 μm of thin semiconducting layers

C. Falco, J. Botineau, A. Azema, M. de Micheli, D. B. Ostrowsky

Optical Sciences, College of

Research output: Contribution to journal › Article

6 Scopus citations

Abstract

An optical characterization of thin semiconducting multilayers in the infrared range, using a combination of m-lines and reflection spectroscopy techniques is exposed. Such a method, non-destructive, allows to determine the thickness and the refractive index of each component of a multilayer multimodal planar waveguide.

Original language	English (US)
Pages (from-to)	23-26
Number of pages	4
Journal	Applied Physics A Solids and Surfaces
Volume	30
Issue number	1
DOIs	https://doi.org/10.1007/BF00617709
State	Published - Jan 1 1983

Keywords

07.60
42.80

ASJC Scopus subject areas

Materials Science(all)
Engineering(all)
Physics and Astronomy (miscellaneous)

Access to Document

10.1007/BF00617709

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Falco, C., Botineau, J., Azema, A., de Micheli, M., & Ostrowsky, D. B. (1983). Optical properties determination at 10.6 μm of thin semiconducting layers. Applied Physics A Solids and Surfaces, 30(1), 23-26. https://doi.org/10.1007/BF00617709

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AU - Ostrowsky, D. B.

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