Optical properties of a laterally confined semiconductor microcavity containing a single quantum well

E. S. Lee, H. M. Gibbs, G. Khitrova

Research output: Contribution to journalArticle

Abstract

The semiconductor microcavity with a thin oxide-aperture layer is fabricated, and linear optical transmission spectrum measured for various aperture diameters. First, the observation of bare cavity modes is demonstrated in this microstructure which is capable of confining light field three-dimensionally. Several transverse modes are observed as transmission peaks, which manifests the lateral field confinement achieved well down to 2 μm aperture diameter. And the transmission spectrum of cavity modes coupled to the excitonic resonance is measured for the same microcavity system containing a single quantum well. The result shows that each transverse mode couples to an exciton independently as it approaches the excitonic resonance frequency, giving rise to an anti-crossing behavior between coupled modes.

Original languageEnglish (US)
Pages (from-to)13-17
Number of pages5
JournalScience and Technology of Advanced Materials
Volume4
Issue number1
DOIs
StatePublished - Jun 30 2003

Keywords

  • Distributed Bragg reflector
  • Exciton
  • Microcavity
  • Normal mode coupling
  • Optical mode
  • Oxide-aperture
  • Photonic device
  • Quantum well
  • Semiconductor microstructure

ASJC Scopus subject areas

  • Materials Science(all)

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