Optical refrigeration of GaAs: Theoretical study

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Abstract

We have performed a theoretical analysis of laser cooling (i.e., cooling via luminescence up-conversion) of bulk GaAs based on a microscopic many-particle theory of absorption and luminescence of a partially ionized electron-hole plasma. This theory allows us to model the semiconductor over a wide range of densities and for temperatures from the few-Kelvin regime to above room temperature. In this paper, we analyze in detail how various physical processes help or hinder cooling. We show that at high temperatures (T≥300 K), cooling is limited by Auger recombination. As temperature is lowered to about 200 K, band filling as well as excitonic effects become significant. Phase-space filling hinders cooling but is overcompensated by excitonic effects, which are found to be beneficial for cooling. At very low temperatures (≤30 K), parasitic background absorption limits cooling, and the interplay between excitonic absorption line shapes and parasitic background absorption determines whether or not cooling is possible in this temperature regime.

Original languageEnglish (US)
Article number245203
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume76
Issue number24
DOIs
StatePublished - Dec 13 2007

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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