Optical spectroscopy of Bi containing semiconductors

A. Chernikov, S. Chatterjee, M. Koch, C. Bückers, S. W. Koch, S. Imhof, A. Thränhardt, Xianfeng Lu, S. R. Johnson, D. A. Beaton, T. Tiedje

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The novel semiconductor material Ga(AsBi) is investigated by the time-resolved photoluminescence as function of lattice temperature, excitation density, and excitation energy. Disorder and localization effects are found to strongly influence the spectra and the dynamics.

Original languageEnglish (US)
Title of host publicationConference on Lasers and Electro-Optics, CLEO 2010
StatePublished - Dec 1 2010
EventConference on Lasers and Electro-Optics, CLEO 2010 - San Jose, CA, United States
Duration: May 16 2010 → May 21 2010

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Other

OtherConference on Lasers and Electro-Optics, CLEO 2010
CountryUnited States
CitySan Jose, CA
Period5/16/10 → 5/21/10

ASJC Scopus subject areas

  • Instrumentation
  • Atomic and Molecular Physics, and Optics

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    Chernikov, A., Chatterjee, S., Koch, M., Bückers, C., Koch, S. W., Imhof, S., Thränhardt, A., Lu, X., Johnson, S. R., Beaton, D. A., & Tiedje, T. (2010). Optical spectroscopy of Bi containing semiconductors. In Conference on Lasers and Electro-Optics, CLEO 2010 (Optics InfoBase Conference Papers).