Optically induced biexciton energy shift in semiconductor quantum wells

I. Rumyantsev, N. H. Kwong, R. Takayama, R. Binder, M. Phillips, H. Wang

Research output: Contribution to conferencePaper

Abstract

The energy level shift of a coherent biexciton (bound two-exciton state) in a semi-conductor has been observed experimentally and analyzed theoretically. The shift, which results from the presence of excitons, can be related to the AC Stark shifts of the underlying exciton states.

Original languageEnglish (US)
PagesQThPDA7/1-QThPDA7/2
StatePublished - Dec 1 2003
EventTrends in Optics and Photonics Series: Quantum electronics and Laser Science (QELS) - Baltimore, MD., United States
Duration: Jun 1 2003Jun 6 2003

Other

OtherTrends in Optics and Photonics Series: Quantum electronics and Laser Science (QELS)
CountryUnited States
CityBaltimore, MD.
Period6/1/036/6/03

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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  • Cite this

    Rumyantsev, I., Kwong, N. H., Takayama, R., Binder, R., Phillips, M., & Wang, H. (2003). Optically induced biexciton energy shift in semiconductor quantum wells. QThPDA7/1-QThPDA7/2. Paper presented at Trends in Optics and Photonics Series: Quantum electronics and Laser Science (QELS), Baltimore, MD., United States.