Optically induced biexciton energy shift in semiconductor quantum wells

I. Rumyantsev, Nai-Hang Kwong, R. Takayama, Rudolf Binder, M. Phillips, H. Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The energy level shift of a coherent biexciton (bound two-exciton state) in a semi-conductor has been observed experimentally and analyzed theoretically. The shift, which results from the presence of excitons, can be related to the AC Stark shifts of the underlying exciton states.

Original languageEnglish (US)
Title of host publicationConference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series
Volume89
Publication statusPublished - 2003
EventTrends in Optics and Photonics Series: Quantum electronics and Laser Science (QELS) - Baltimore, MD., United States
Duration: Jun 1 2003Jun 6 2003

Other

OtherTrends in Optics and Photonics Series: Quantum electronics and Laser Science (QELS)
CountryUnited States
CityBaltimore, MD.
Period6/1/036/6/03

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Rumyantsev, I., Kwong, N-H., Takayama, R., Binder, R., Phillips, M., & Wang, H. (2003). Optically induced biexciton energy shift in semiconductor quantum wells. In Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series (Vol. 89)