Abstract
The optically induced excitation density in a semiconductor multiple quantum well is experimentally observed to go through a maximum at sufficiently high excitation intensity. This is achieved by using the interaction of two copropagating ultrafast optical pulses to extract the temporal dependence of the optically induced polarization, which is proportional to the temporal derivative of the excitation density. Solutions to the Maxwell semiconductor Bloch equations show that the observations are a manifestation of Rabi flopping in semiconductors. The results confirm the presence of many‐body modifications to the Rabi flopping for the excitation conditions used in the experiment.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 307-319 |
| Number of pages | 13 |
| Journal | physica status solidi (b) |
| Volume | 188 |
| Issue number | 1 |
| DOIs | |
| State | Published - 1995 |
| Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
Fingerprint Dive into the research topics of 'Optically induced excitation density flops in semiconductors'. Together they form a unique fingerprint.
Cite this
Cundiff, S. T., Knorr, A., Feldmann, J., Koch, S. W., Gobel, E. O., & Nickel, H. (1995). Optically induced excitation density flops in semiconductors. physica status solidi (b), 188(1), 307-319. https://doi.org/10.1002/pssb.2221880128