Optically induced excitation density flops in semiconductors

S. T. Cundiff, A. Knorr, J. Feldmann, Stephan W Koch, E. O. Gobel, H. Nickel

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

The optically induced excitation density in a semiconductor multiple quantum well is experimentally observed to go through a maximum at sufficiently high excitation intensity. This is achieved by using the interaction of two copropagating ultrafast optical pulses to extract the temporal dependence of the optically induced polarization, which is proportional to the temporal derivative of the excitation density. Solutions to the Maxwell semiconductor Bloch equations show that the observations are a manifestation of Rabi flopping in semiconductors. The results confirm the presence of many‐body modifications to the Rabi flopping for the excitation conditions used in the experiment.

Original languageEnglish (US)
Pages (from-to)307-319
Number of pages13
Journalphysica status solidi (b)
Volume188
Issue number1
DOIs
StatePublished - 1995
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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    Cundiff, S. T., Knorr, A., Feldmann, J., Koch, S. W., Gobel, E. O., & Nickel, H. (1995). Optically induced excitation density flops in semiconductors. physica status solidi (b), 188(1), 307-319. https://doi.org/10.1002/pssb.2221880128