Abstract
The optically induced excitation density in a semiconductor multiple quantum well is experimentally observed to go through a maximum at sufficiently high excitation intensity. This is achieved by using the interaction of two copropagating ultrafast optical pulses to extract the temporal dependence of the optically induced polarization, which is proportional to the temporal derivative of the excitation density. Solutions to the Maxwell semiconductor Bloch equations show that the observations are a manifestation of Rabi flopping in semiconductors. The results confirm the presence of many‐body modifications to the Rabi flopping for the excitation conditions used in the experiment.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 307-319 |
| Number of pages | 13 |
| Journal | physica status solidi (b) |
| Volume | 188 |
| Issue number | 1 |
| DOIs | |
| State | Published - 1995 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
Cite this
Optically induced excitation density flops in semiconductors. / Cundiff, S. T.; Knorr, A.; Feldmann, J.; Koch, Stephan W; Gobel, E. O.; Nickel, H.
In: physica status solidi (b), Vol. 188, No. 1, 1995, p. 307-319.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Optically induced excitation density flops in semiconductors
AU - Cundiff, S. T.
AU - Knorr, A.
AU - Feldmann, J.
AU - Koch, Stephan W
AU - Gobel, E. O.
AU - Nickel, H.
PY - 1995
Y1 - 1995
N2 - The optically induced excitation density in a semiconductor multiple quantum well is experimentally observed to go through a maximum at sufficiently high excitation intensity. This is achieved by using the interaction of two copropagating ultrafast optical pulses to extract the temporal dependence of the optically induced polarization, which is proportional to the temporal derivative of the excitation density. Solutions to the Maxwell semiconductor Bloch equations show that the observations are a manifestation of Rabi flopping in semiconductors. The results confirm the presence of many‐body modifications to the Rabi flopping for the excitation conditions used in the experiment.
AB - The optically induced excitation density in a semiconductor multiple quantum well is experimentally observed to go through a maximum at sufficiently high excitation intensity. This is achieved by using the interaction of two copropagating ultrafast optical pulses to extract the temporal dependence of the optically induced polarization, which is proportional to the temporal derivative of the excitation density. Solutions to the Maxwell semiconductor Bloch equations show that the observations are a manifestation of Rabi flopping in semiconductors. The results confirm the presence of many‐body modifications to the Rabi flopping for the excitation conditions used in the experiment.
UR - http://www.scopus.com/inward/record.url?scp=84990630756&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84990630756&partnerID=8YFLogxK
U2 - 10.1002/pssb.2221880128
DO - 10.1002/pssb.2221880128
M3 - Article
AN - SCOPUS:84990630756
VL - 188
SP - 307
EP - 319
JO - Physica Status Solidi (B): Basic Research
JF - Physica Status Solidi (B): Basic Research
SN - 0370-1972
IS - 1
ER -