Optically induced ultrafast three-band coherences in semiconductor quantum wells

M. Lindberg, Rudolf Binder

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Intervalence band coherences in semiconductor quantum wells induced by femtosecond light pulses are investigated. Especially, the possibility of creating dark states, known from atomic physics, in semiconductor quantum wells, is discussed. The analysis includes many-body effects due to the Coulomb interaction and bandstructure effects appropriate for GaAs quantum wells.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherSociety of Photo-Optical Instrumentation Engineers
Pages480-486
Number of pages7
Volume2399
ISBN (Print)0819417467
StatePublished - 1995
Externally publishedYes
EventPhysics and Simulation of Optoelectronic Devices III - San Jose, CA, USA
Duration: Feb 6 1995Feb 9 1995

Other

OtherPhysics and Simulation of Optoelectronic Devices III
CitySan Jose, CA, USA
Period2/6/952/9/95

Fingerprint

Semiconductor quantum wells
quantum wells
Atomic physics
atomic physics
Coulomb interactions
pulses
interactions

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Lindberg, M., & Binder, R. (1995). Optically induced ultrafast three-band coherences in semiconductor quantum wells. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 2399, pp. 480-486). Society of Photo-Optical Instrumentation Engineers.

Optically induced ultrafast three-band coherences in semiconductor quantum wells. / Lindberg, M.; Binder, Rudolf.

Proceedings of SPIE - The International Society for Optical Engineering. Vol. 2399 Society of Photo-Optical Instrumentation Engineers, 1995. p. 480-486.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Lindberg, M & Binder, R 1995, Optically induced ultrafast three-band coherences in semiconductor quantum wells. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 2399, Society of Photo-Optical Instrumentation Engineers, pp. 480-486, Physics and Simulation of Optoelectronic Devices III, San Jose, CA, USA, 2/6/95.
Lindberg M, Binder R. Optically induced ultrafast three-band coherences in semiconductor quantum wells. In Proceedings of SPIE - The International Society for Optical Engineering. Vol. 2399. Society of Photo-Optical Instrumentation Engineers. 1995. p. 480-486
Lindberg, M. ; Binder, Rudolf. / Optically induced ultrafast three-band coherences in semiconductor quantum wells. Proceedings of SPIE - The International Society for Optical Engineering. Vol. 2399 Society of Photo-Optical Instrumentation Engineers, 1995. pp. 480-486
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