Optically induced ultrafast three-band coherences in semiconductor quantum wells

M. Lindberg, Rudolf H. Binder

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Intervalence band coherences in semiconductor quantum wells induced by femtosecond light pulses are investigated. Especially, the possibility of creating dark states, known from atomic physics, in semiconductor quantum wells, is discussed. The analysis includes many-body effects due to the Coulomb interaction and bandstructure effects appropriate for GaAs quantum wells.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherSociety of Photo-Optical Instrumentation Engineers
Pages480-486
Number of pages7
ISBN (Print)0819417467
StatePublished - Jan 1 1995
Externally publishedYes
EventPhysics and Simulation of Optoelectronic Devices III - San Jose, CA, USA
Duration: Feb 6 1995Feb 9 1995

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume2399
ISSN (Print)0277-786X

Other

OtherPhysics and Simulation of Optoelectronic Devices III
CitySan Jose, CA, USA
Period2/6/952/9/95

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Optically induced ultrafast three-band coherences in semiconductor quantum wells'. Together they form a unique fingerprint.

  • Cite this

    Lindberg, M., & Binder, R. H. (1995). Optically induced ultrafast three-band coherences in semiconductor quantum wells. In Proceedings of SPIE - The International Society for Optical Engineering (pp. 480-486). (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 2399). Society of Photo-Optical Instrumentation Engineers.