Optimization of ultrashort pulse generation in passively mode-locked vertical external-cavity semiconductor lasers

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We present a genetic algorithm based method to optimize the gain medium design of a passively mode-locked vertical external-cavity surface-emitting laser (VECSEL) for ultrashort pulse generation. Beginning with a given standard VECSEL design, we show that a simple modification to the DBR within the active mirror can significantly reduce both the duration and the chirp of the generated pulse. We demonstrate, using realistic numerical simulations, that the full-width at half-maximum of the pulse can be reduced by more than a factor of two. The required design changes come at the cost of increased sensitivity to perturbations in the active chip growth. Methods of counteracting this trend are presented.

Original languageEnglish (US)
Pages (from-to)439-445
Number of pages7
JournalIEEE Journal of Quantum Electronics
Volume45
Issue number5
DOIs
StatePublished - 2009

Fingerprint

Laser modes
Ultrashort pulses
Semiconductor lasers
semiconductor lasers
Surface emitting lasers
surface emitting lasers
cavities
optimization
pulses
chirp
Full width at half maximum
genetic algorithms
Mirrors
Genetic algorithms
chips
mirrors
trends
perturbation
sensitivity
Computer simulation

Keywords

  • Optimization methods
  • Semiconductor lasers
  • Ultrashort pulse generation
  • Vertical external-cavity surface-emitting laser (VECSEL)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

Cite this

@article{d40cfa7786884c47af79253f18c48d56,
title = "Optimization of ultrashort pulse generation in passively mode-locked vertical external-cavity semiconductor lasers",
abstract = "We present a genetic algorithm based method to optimize the gain medium design of a passively mode-locked vertical external-cavity surface-emitting laser (VECSEL) for ultrashort pulse generation. Beginning with a given standard VECSEL design, we show that a simple modification to the DBR within the active mirror can significantly reduce both the duration and the chirp of the generated pulse. We demonstrate, using realistic numerical simulations, that the full-width at half-maximum of the pulse can be reduced by more than a factor of two. The required design changes come at the cost of increased sensitivity to perturbations in the active chip growth. Methods of counteracting this trend are presented.",
keywords = "Optimization methods, Semiconductor lasers, Ultrashort pulse generation, Vertical external-cavity surface-emitting laser (VECSEL)",
author = "David Love and Miroslav Kolesik and Moloney, {Jerome V}",
year = "2009",
doi = "10.1109/JQE.2009.2013729",
language = "English (US)",
volume = "45",
pages = "439--445",
journal = "IEEE Journal of Quantum Electronics",
issn = "0018-9197",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "5",

}

TY - JOUR

T1 - Optimization of ultrashort pulse generation in passively mode-locked vertical external-cavity semiconductor lasers

AU - Love, David

AU - Kolesik, Miroslav

AU - Moloney, Jerome V

PY - 2009

Y1 - 2009

N2 - We present a genetic algorithm based method to optimize the gain medium design of a passively mode-locked vertical external-cavity surface-emitting laser (VECSEL) for ultrashort pulse generation. Beginning with a given standard VECSEL design, we show that a simple modification to the DBR within the active mirror can significantly reduce both the duration and the chirp of the generated pulse. We demonstrate, using realistic numerical simulations, that the full-width at half-maximum of the pulse can be reduced by more than a factor of two. The required design changes come at the cost of increased sensitivity to perturbations in the active chip growth. Methods of counteracting this trend are presented.

AB - We present a genetic algorithm based method to optimize the gain medium design of a passively mode-locked vertical external-cavity surface-emitting laser (VECSEL) for ultrashort pulse generation. Beginning with a given standard VECSEL design, we show that a simple modification to the DBR within the active mirror can significantly reduce both the duration and the chirp of the generated pulse. We demonstrate, using realistic numerical simulations, that the full-width at half-maximum of the pulse can be reduced by more than a factor of two. The required design changes come at the cost of increased sensitivity to perturbations in the active chip growth. Methods of counteracting this trend are presented.

KW - Optimization methods

KW - Semiconductor lasers

KW - Ultrashort pulse generation

KW - Vertical external-cavity surface-emitting laser (VECSEL)

UR - http://www.scopus.com/inward/record.url?scp=65549090044&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=65549090044&partnerID=8YFLogxK

U2 - 10.1109/JQE.2009.2013729

DO - 10.1109/JQE.2009.2013729

M3 - Article

AN - SCOPUS:65549090044

VL - 45

SP - 439

EP - 445

JO - IEEE Journal of Quantum Electronics

JF - IEEE Journal of Quantum Electronics

SN - 0018-9197

IS - 5

ER -