Optoelectronic properties of InGaAs/InGaAsP multiple-quantum-well waveguide detectors

F. S. Choa, Thomas L Koch, U. Koren, B. I. Miller

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The performance of InGaAs/InGaAsP multiple-quantum-well material as the absorbing medium in waveguide detectors is discussed. No deleterious saturation effects were observed up to an absorbed power of approximately 1 mW, with strong enough absorption for a four-well separate confinement heterostructure to provide ≥80% quantum efficiency for lengths at least as short as 114 μm. The frequency response up to 5 GHz shows only a simple parasitic-limited rolloff which matches the measured impedance. These results provide sound evidence that the carrier trapping problem in this quantum-well material combination is much less serious than that in other material systems. This has important consequences not only for quantum-well field effect optical devices, but also for photonic integration, since the same quantum-well layers can simultaneously serve as a gain medium and as a detecting medium.

Original languageEnglish (US)
Pages (from-to)376-378
Number of pages3
JournalIEEE Photonics Technology Letters
Volume1
Issue number11
DOIs
StatePublished - Nov 1989
Externally publishedYes

Fingerprint

Optoelectronic devices
Semiconductor quantum wells
Waveguides
quantum wells
waveguides
Detectors
detectors
Acoustic impedance
Optical devices
Quantum efficiency
Photonics
frequency response
Frequency response
Heterojunctions
quantum efficiency
trapping
Acoustic waves
impedance
photonics
saturation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)
  • Atomic and Molecular Physics, and Optics

Cite this

Optoelectronic properties of InGaAs/InGaAsP multiple-quantum-well waveguide detectors. / Choa, F. S.; Koch, Thomas L; Koren, U.; Miller, B. I.

In: IEEE Photonics Technology Letters, Vol. 1, No. 11, 11.1989, p. 376-378.

Research output: Contribution to journalArticle

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