Optoelectronic Properties of InGaAs/InGaAsP Multiple-Quantum-Well Waveguide Detectors

F. S. Choa, T. L. Koch, U. Koren, B. I. Miller

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

The performance of InGaAs/InGaAsP multiple-quantum- well material as the absorbing medium in waveguide detectors has been studied. We observe no deleterious saturation effects up to absorbed power of ~ 1 mW, with strong enough absorption for a four-well separate confinement heterostructure to provide ≳80 percent quantum efficiency for lengths at least as short as 114 µm. Frequency response up to 5 GHz shows only a simple parasitic-limited rolloff which matches the measured impedence. These results provide sound evidence that the carrier trapping problem in this quantum-well material combination is much less serious than that in other material systems. In addition to quantum-well field effect optical devices, this has important consequences for photonic integration, since the same quantum-well layers may simultaneously serve as a gain medium and as a detecting medium.

Original languageEnglish (US)
Pages (from-to)376-378
Number of pages3
JournalIEEE Photonics Technology Letters
Volume1
Issue number11
DOIs
StatePublished - Nov 1989
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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