Optoelectronic properties of InGaAs/InGaAsP multiple-quantum well wave-guide detectors

F. S. Choa, Thomas L Koch, U. Koren, B. I. Miller

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The performance of quantum-well (QW) devices relying on carrier transport perpendicular to the wells can be seriously affected by carrier trapping effects; trapping can reduce device speed and carrier accumulation may saturate the absorption and introduce signal distortion. Experimental results are reported which show that InGaAsP barriers with InGaAs wells improve this situation considerably over the InP barrier case. The layer structure of the QW detector is composed of four 80-angstrom InGaAs wells separated by 300-angstrom InGaAsP barriers. The quantum efficiency of samples with buried heterostructure waveguide lengths of 247, 142 and 114 μm was measured. ≥80% quantum efficiency for even the shortest sample was observed, with strong absorption especially at the QW's own lasing wavelength. Also observed was a smooth parasitic-limited roll-off with a 3 dB frequency of approximately 1.5 GHz, with little or no dependence on input power level from 4 μA to 1 mA photocurrent.

Original languageEnglish (US)
Title of host publicationConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
PublisherPubl by IEEE
Pages137
Number of pages1
StatePublished - 1989
Externally publishedYes
EventSecond Annual Meeting of the IEEE Lasers and Electro-Optics Society - LEOS '89 - Orlando, FL, USA
Duration: Oct 17 1989Oct 20 1989

Other

OtherSecond Annual Meeting of the IEEE Lasers and Electro-Optics Society - LEOS '89
CityOrlando, FL, USA
Period10/17/8910/20/89

Fingerprint

Quantum efficiency
Optoelectronic devices
Semiconductor quantum wells
Detectors
Signal distortion
Carrier transport
Photocurrents
Heterojunctions
Waveguides
Wavelength

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering

Cite this

Choa, F. S., Koch, T. L., Koren, U., & Miller, B. I. (1989). Optoelectronic properties of InGaAs/InGaAsP multiple-quantum well wave-guide detectors. In Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS (pp. 137). Publ by IEEE.

Optoelectronic properties of InGaAs/InGaAsP multiple-quantum well wave-guide detectors. / Choa, F. S.; Koch, Thomas L; Koren, U.; Miller, B. I.

Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS. Publ by IEEE, 1989. p. 137.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Choa, FS, Koch, TL, Koren, U & Miller, BI 1989, Optoelectronic properties of InGaAs/InGaAsP multiple-quantum well wave-guide detectors. in Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS. Publ by IEEE, pp. 137, Second Annual Meeting of the IEEE Lasers and Electro-Optics Society - LEOS '89, Orlando, FL, USA, 10/17/89.
Choa FS, Koch TL, Koren U, Miller BI. Optoelectronic properties of InGaAs/InGaAsP multiple-quantum well wave-guide detectors. In Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS. Publ by IEEE. 1989. p. 137
Choa, F. S. ; Koch, Thomas L ; Koren, U. ; Miller, B. I. / Optoelectronic properties of InGaAs/InGaAsP multiple-quantum well wave-guide detectors. Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS. Publ by IEEE, 1989. pp. 137
@inproceedings{59be8daceee24b2aab877348c41ca16f,
title = "Optoelectronic properties of InGaAs/InGaAsP multiple-quantum well wave-guide detectors",
abstract = "The performance of quantum-well (QW) devices relying on carrier transport perpendicular to the wells can be seriously affected by carrier trapping effects; trapping can reduce device speed and carrier accumulation may saturate the absorption and introduce signal distortion. Experimental results are reported which show that InGaAsP barriers with InGaAs wells improve this situation considerably over the InP barrier case. The layer structure of the QW detector is composed of four 80-angstrom InGaAs wells separated by 300-angstrom InGaAsP barriers. The quantum efficiency of samples with buried heterostructure waveguide lengths of 247, 142 and 114 μm was measured. ≥80{\%} quantum efficiency for even the shortest sample was observed, with strong absorption especially at the QW's own lasing wavelength. Also observed was a smooth parasitic-limited roll-off with a 3 dB frequency of approximately 1.5 GHz, with little or no dependence on input power level from 4 μA to 1 mA photocurrent.",
author = "Choa, {F. S.} and Koch, {Thomas L} and U. Koren and Miller, {B. I.}",
year = "1989",
language = "English (US)",
pages = "137",
booktitle = "Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS",
publisher = "Publ by IEEE",

}

TY - GEN

T1 - Optoelectronic properties of InGaAs/InGaAsP multiple-quantum well wave-guide detectors

AU - Choa, F. S.

AU - Koch, Thomas L

AU - Koren, U.

AU - Miller, B. I.

PY - 1989

Y1 - 1989

N2 - The performance of quantum-well (QW) devices relying on carrier transport perpendicular to the wells can be seriously affected by carrier trapping effects; trapping can reduce device speed and carrier accumulation may saturate the absorption and introduce signal distortion. Experimental results are reported which show that InGaAsP barriers with InGaAs wells improve this situation considerably over the InP barrier case. The layer structure of the QW detector is composed of four 80-angstrom InGaAs wells separated by 300-angstrom InGaAsP barriers. The quantum efficiency of samples with buried heterostructure waveguide lengths of 247, 142 and 114 μm was measured. ≥80% quantum efficiency for even the shortest sample was observed, with strong absorption especially at the QW's own lasing wavelength. Also observed was a smooth parasitic-limited roll-off with a 3 dB frequency of approximately 1.5 GHz, with little or no dependence on input power level from 4 μA to 1 mA photocurrent.

AB - The performance of quantum-well (QW) devices relying on carrier transport perpendicular to the wells can be seriously affected by carrier trapping effects; trapping can reduce device speed and carrier accumulation may saturate the absorption and introduce signal distortion. Experimental results are reported which show that InGaAsP barriers with InGaAs wells improve this situation considerably over the InP barrier case. The layer structure of the QW detector is composed of four 80-angstrom InGaAs wells separated by 300-angstrom InGaAsP barriers. The quantum efficiency of samples with buried heterostructure waveguide lengths of 247, 142 and 114 μm was measured. ≥80% quantum efficiency for even the shortest sample was observed, with strong absorption especially at the QW's own lasing wavelength. Also observed was a smooth parasitic-limited roll-off with a 3 dB frequency of approximately 1.5 GHz, with little or no dependence on input power level from 4 μA to 1 mA photocurrent.

UR - http://www.scopus.com/inward/record.url?scp=0024926091&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0024926091&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0024926091

SP - 137

BT - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

PB - Publ by IEEE

ER -