Oscillatory tunnel magnetoresistance in double barrier magnetic tunnel junctions

Zhong Ming Zeng, Xiu Feng Han, Wen Shan Zhan, Yong Wang, Ze Zhang, Shufeng Zhang

Research output: Contribution to journalArticle

25 Scopus citations

Abstract

We report an unconventional oscillatory tunnel magnetoresistance as a function of the applied bias in double barrier magnetic tunnel junctions that were made of two Al2O3barriers sandwiched by three ferromagnetic layers. When the center ferromagnetic layer is aligned antiparallel to the top and bottom magnetic layers, a distinct magnetoresistance oscillation appears with respect to the increase of the bias voltage at 4.2 K and at room temperature. The period of the oscillation is about 1.6 mV.

Original languageEnglish (US)
Article number054419
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume72
Issue number5
DOIs
StatePublished - 2005

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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