Oxides Formed on Polycrystalline Titanium Thin-Film Surfaces: Rates of Formation and Composition of Oxides Formed at Low and High O2 Partial Pressures

Michael C. Burrell, Neal R. Armstrong

Research output: Contribution to journalArticle

19 Scopus citations

Abstract

The room temperature surface oxidation of evaporated titanium thin films was investigated by a quartz crystal microbalance and Auger electron spectroscopy. The initial oxidation reaction was characterized by a linear oxygen adsorption rate and the formation of a TiO2/Ti2O3 layer and ends when ca. three monolayers of oxygen have been adsorbed. Continued oxidation occurs at a logarithmic rate, and predominantly TiO2 is formed. The rate of oxygen adsorption and the limiting oxide thickness were dependent on the constant field growth mechanism proposed by Fehlner and Mott (1970). The results of these studies are used as controls in the investigation of the electrochemical oxidation of titanium—the subject of the following paper in this issue.

Original languageEnglish (US)
Pages (from-to)30-36
Number of pages7
JournalLangmuir
Volume2
Issue number1
DOIs
StatePublished - Jan 1 1986

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Spectroscopy
  • Electrochemistry

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