p-Channel hot-carrier optimization of RNO gate dielectrics through the reoxidation step

Brian S. Doyle, Ara Philipossian

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The effects of reoxidation conditions on the hot-carrier properties of reoxidized nitrided oxides (RNO's) for both n- and p-MOS transistors are examined. Using a recently developed lifetime extraction technique for p-MOS transistors, it is shown that the reoxidation conditions for the RNO dielectric involve a compromise between n-channel hot-carrier hardness and p-channel hot-carrier susceptibility. Whereas the n-MOS transistors lifetimes are relatively unchanged as a function of reoxidation time, the p-MOS devices show monotonic increases with increased reoxidation time. This is attributed to changes of nitrogen concentration in the bulk of the oxide, but not at the interface. It is concluded that attention will have to be paid to the p-channel transistor reliability when optimizing the RNO process.

Original languageEnglish (US)
Pages (from-to)161-163
Number of pages3
JournalIEEE Electron Device Letters
Volume14
Issue number4
DOIs
StatePublished - Apr 1993
Externally publishedYes

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Hot carriers
Gate dielectrics
Oxides
MOSFET devices
MOS devices
Transistors
Nitrogen
Hardness

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

p-Channel hot-carrier optimization of RNO gate dielectrics through the reoxidation step. / Doyle, Brian S.; Philipossian, Ara.

In: IEEE Electron Device Letters, Vol. 14, No. 4, 04.1993, p. 161-163.

Research output: Contribution to journalArticle

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