p-Channel Hot-Carrier Optimization of RNO Gate Dielectrics Through the Reoxidation Step

Brian S. Doyle, A. Philipossian

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

The effects of reoxidation conditions on the hot-carrier properties of reoxidized nitrided oxides (RNO's) for both n-and p-MOS transistors are examined. Using a recently developed lifetime extraction technique for p-MOS transistors, it is shown that the reoxidation conditions for the RNO dielectric involve a compromise between n-channel hot-carrier hardness and p-channel hot-carrier susceptibility. Whereas the n-MOS transistor lifetimes are relatively unchanged as a function of reoxidation time, the p-MOS devices show monotonic increases with increased reoxidation time. This is attributed to changes of nitrogen concentration in the bulk of the oxide, but not at the interface. It is concluded that attention will have to be paid to the p-channel transistor reliability when optimizing the RNO process.

Original languageEnglish (US)
Pages (from-to)161-163
Number of pages3
JournalIEEE Electron Device Letters
Volume14
Issue number4
DOIs
StatePublished - Apr 1993
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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