Pad topography, contact area and hydrodynamic lubrication in chemical-mechanical polishing

Leonard J. Borucki, Ting Sun, Yun Zhuang, David Slutz, Ara Philipossian

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

Material removal during CMP occurs by the activation of slurry particles at contact points between pad summits and the wafer. When slurry is present and the wafer is sliding, contacts become lubricated. We present an analysis valid over the fill range from static contact to hydroplaning that indicates that CMP usually operates in boundary or mixed lubrication mode at contacts and that the lubrication layer is nanometers thick. The results suggest that the sliding solid contact area is mainly responsible for the friction coefficient while both the solid contact and lubricated areas control the removal rate.

Original languageEnglish (US)
Title of host publicationScience and Technology of Chemical Mechanical Planarization (CMP)
Pages9-14
Number of pages6
StatePublished - Jul 1 2010
Event2009 MRS Spring Meeting - San Francisco, CA, United States
Duration: Apr 14 2009Apr 17 2009

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1157
ISSN (Print)0272-9172

Other

Other2009 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period4/14/094/17/09

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Borucki, L. J., Sun, T., Zhuang, Y., Slutz, D., & Philipossian, A. (2010). Pad topography, contact area and hydrodynamic lubrication in chemical-mechanical polishing. In Science and Technology of Chemical Mechanical Planarization (CMP) (pp. 9-14). (Materials Research Society Symposium Proceedings; Vol. 1157).