Pad topography, contact area and hydrodynamic lubrication in chemical-mechanical polishing

Leonard J. Borucki, Ting Sun, Yun Zhuang, David Slutz, Ara Philipossian

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Material removal during CMP occurs by the activation of slurry particles at contact points between pad summits and the wafer. When slurry is present and the wafer is sliding, contacts become lubricated. We present an analysis valid over the fill range from static contact to hydroplaning that indicates that CMP usually operates in boundary or mixed lubrication mode at contacts and that the lubrication layer is nanometers thick. The results suggest that the sliding solid contact area is mainly responsible for the friction coefficient while both the solid contact and lubricated areas control the removal rate.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings
Pages9-14
Number of pages6
Volume1157
StatePublished - 2010
Event2009 MRS Spring Meeting - San Francisco, CA, United States
Duration: Apr 14 2009Apr 17 2009

Other

Other2009 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period4/14/094/17/09

Fingerprint

Cytidine Monophosphate
Bearing pads
Chemical mechanical polishing
lubrication
polishing
Contacts (fluid mechanics)
Topography
hydroplaning
Lubrication
topography
Hydrodynamics
hydrodynamics
wafers
boundary lubrication
sliding contact
Point contacts
machining
coefficient of friction
sliding
Chemical activation

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Borucki, L. J., Sun, T., Zhuang, Y., Slutz, D., & Philipossian, A. (2010). Pad topography, contact area and hydrodynamic lubrication in chemical-mechanical polishing. In Materials Research Society Symposium Proceedings (Vol. 1157, pp. 9-14)

Pad topography, contact area and hydrodynamic lubrication in chemical-mechanical polishing. / Borucki, Leonard J.; Sun, Ting; Zhuang, Yun; Slutz, David; Philipossian, Ara.

Materials Research Society Symposium Proceedings. Vol. 1157 2010. p. 9-14.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Borucki, LJ, Sun, T, Zhuang, Y, Slutz, D & Philipossian, A 2010, Pad topography, contact area and hydrodynamic lubrication in chemical-mechanical polishing. in Materials Research Society Symposium Proceedings. vol. 1157, pp. 9-14, 2009 MRS Spring Meeting, San Francisco, CA, United States, 4/14/09.
Borucki LJ, Sun T, Zhuang Y, Slutz D, Philipossian A. Pad topography, contact area and hydrodynamic lubrication in chemical-mechanical polishing. In Materials Research Society Symposium Proceedings. Vol. 1157. 2010. p. 9-14
Borucki, Leonard J. ; Sun, Ting ; Zhuang, Yun ; Slutz, David ; Philipossian, Ara. / Pad topography, contact area and hydrodynamic lubrication in chemical-mechanical polishing. Materials Research Society Symposium Proceedings. Vol. 1157 2010. pp. 9-14
@inproceedings{31a4cf17cf22459a8ebeee54faa4f5cb,
title = "Pad topography, contact area and hydrodynamic lubrication in chemical-mechanical polishing",
abstract = "Material removal during CMP occurs by the activation of slurry particles at contact points between pad summits and the wafer. When slurry is present and the wafer is sliding, contacts become lubricated. We present an analysis valid over the fill range from static contact to hydroplaning that indicates that CMP usually operates in boundary or mixed lubrication mode at contacts and that the lubrication layer is nanometers thick. The results suggest that the sliding solid contact area is mainly responsible for the friction coefficient while both the solid contact and lubricated areas control the removal rate.",
author = "Borucki, {Leonard J.} and Ting Sun and Yun Zhuang and David Slutz and Ara Philipossian",
year = "2010",
language = "English (US)",
isbn = "9781605111308",
volume = "1157",
pages = "9--14",
booktitle = "Materials Research Society Symposium Proceedings",

}

TY - GEN

T1 - Pad topography, contact area and hydrodynamic lubrication in chemical-mechanical polishing

AU - Borucki, Leonard J.

AU - Sun, Ting

AU - Zhuang, Yun

AU - Slutz, David

AU - Philipossian, Ara

PY - 2010

Y1 - 2010

N2 - Material removal during CMP occurs by the activation of slurry particles at contact points between pad summits and the wafer. When slurry is present and the wafer is sliding, contacts become lubricated. We present an analysis valid over the fill range from static contact to hydroplaning that indicates that CMP usually operates in boundary or mixed lubrication mode at contacts and that the lubrication layer is nanometers thick. The results suggest that the sliding solid contact area is mainly responsible for the friction coefficient while both the solid contact and lubricated areas control the removal rate.

AB - Material removal during CMP occurs by the activation of slurry particles at contact points between pad summits and the wafer. When slurry is present and the wafer is sliding, contacts become lubricated. We present an analysis valid over the fill range from static contact to hydroplaning that indicates that CMP usually operates in boundary or mixed lubrication mode at contacts and that the lubrication layer is nanometers thick. The results suggest that the sliding solid contact area is mainly responsible for the friction coefficient while both the solid contact and lubricated areas control the removal rate.

UR - http://www.scopus.com/inward/record.url?scp=77953997500&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77953997500&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:77953997500

SN - 9781605111308

VL - 1157

SP - 9

EP - 14

BT - Materials Research Society Symposium Proceedings

ER -