Parallel fabrication of magnetic tunnel junction nanopillars by nanosphere lithography

Weigang Wang, A. Pearse, M. Li, S. Hageman, A. X. Chen, F. Q. Zhu, C. L. Chien

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

We present a new method for fabricating magnetic tunnel junction nanopillars that uses polystyrene nanospheres as a lithographic template. Unlike the common approaches, which depend on electron beam lithography to sequentially fabricate each nanopillar, this method is capable of patterning a large number of nanopillars simultaneously. Both random and ordered nanosphere patterns have been explored for fabricating high quality tunneling junctions with magnetoresistance in excess of 100%, employing ferromagnetic layers with both out-of-plane and in-plane easy axis. Novel voltage induced switching has been observed in these structures. This method provides a cost-effective way of rapidly fabricating a large number of tunnel junction nanopillars in parallel.

Original languageEnglish (US)
Article number1948
JournalScientific Reports
Volume3
DOIs
StatePublished - Jun 6 2013
Externally publishedYes

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tunnel junctions
lithography
fabrication
polystyrene
templates
electron beams
costs
electric potential

ASJC Scopus subject areas

  • General

Cite this

Wang, W., Pearse, A., Li, M., Hageman, S., Chen, A. X., Zhu, F. Q., & Chien, C. L. (2013). Parallel fabrication of magnetic tunnel junction nanopillars by nanosphere lithography. Scientific Reports, 3, [1948]. https://doi.org/10.1038/srep01948

Parallel fabrication of magnetic tunnel junction nanopillars by nanosphere lithography. / Wang, Weigang; Pearse, A.; Li, M.; Hageman, S.; Chen, A. X.; Zhu, F. Q.; Chien, C. L.

In: Scientific Reports, Vol. 3, 1948, 06.06.2013.

Research output: Contribution to journalArticle

Wang, Weigang ; Pearse, A. ; Li, M. ; Hageman, S. ; Chen, A. X. ; Zhu, F. Q. ; Chien, C. L. / Parallel fabrication of magnetic tunnel junction nanopillars by nanosphere lithography. In: Scientific Reports. 2013 ; Vol. 3.
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