Particulate science and technology in the engineering of slurries for chemical mechanical planarization

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8 Citations (Scopus)

Abstract

Chemical Mechanical Planarization (CMP) is a process that is now routinely used to planarize metal as well dielectric films during the fabrication of integrated circuits. This process uses slurries comprised of fine abrasive particles, such as silica, ceria or alumina. The stability and performance of the slurries are influenced by the size and properties of these particles, which in turn are influenced by their synthesis route. Stability is important to improve slurry lifetime and minimize defects such as microscratching caused by particle agglomerates or large particle counts (LPC) during polishing. The rheological behavior of slurry affects the friction at the pad-particle-wafer interface and alters the material removal rate. It is, thus, necessary to carefully engineer the slurry characteristics to achieve good removal rate and planarity without causing defects. This paper reviews the published literature on the synthesis of abrasive particles used in the preparation of CMP slurries as well as stability and rheological characteristics of slurries made from these particles. A brief account of particle-film interactions and importance of LPC in wafer scratching is also provided.

Original languageEnglish (US)
Pages (from-to)94-105
Number of pages12
JournalKONA Powder and Particle Journal
Volume26
Issue numberMarch
DOIs
StatePublished - 2008

Fingerprint

Chemical mechanical polishing
Slurries
Abrasives
Defects
Dielectric films
Aluminum Oxide
Cerium compounds
Polishing
Silicon Dioxide
Integrated circuits
Alumina
Metals
Silica
Friction
Engineers
Fabrication

Keywords

  • Alumina
  • Ceria
  • Chemical mechanical planarization
  • CMP
  • Coefficient of friction
  • COF
  • Colloidal silica
  • Fumed silica
  • Large particle count
  • LPC
  • Slurry stability

ASJC Scopus subject areas

  • Chemical Engineering(all)
  • Chemistry(all)
  • Engineering(all)
  • Materials Science(all)

Cite this

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title = "Particulate science and technology in the engineering of slurries for chemical mechanical planarization",
abstract = "Chemical Mechanical Planarization (CMP) is a process that is now routinely used to planarize metal as well dielectric films during the fabrication of integrated circuits. This process uses slurries comprised of fine abrasive particles, such as silica, ceria or alumina. The stability and performance of the slurries are influenced by the size and properties of these particles, which in turn are influenced by their synthesis route. Stability is important to improve slurry lifetime and minimize defects such as microscratching caused by particle agglomerates or large particle counts (LPC) during polishing. The rheological behavior of slurry affects the friction at the pad-particle-wafer interface and alters the material removal rate. It is, thus, necessary to carefully engineer the slurry characteristics to achieve good removal rate and planarity without causing defects. This paper reviews the published literature on the synthesis of abrasive particles used in the preparation of CMP slurries as well as stability and rheological characteristics of slurries made from these particles. A brief account of particle-film interactions and importance of LPC in wafer scratching is also provided.",
keywords = "Alumina, Ceria, Chemical mechanical planarization, CMP, Coefficient of friction, COF, Colloidal silica, Fumed silica, Large particle count, LPC, Slurry stability",
author = "Srini Raghavan and Keswani, {Manish K} and Renhe Jia",
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AB - Chemical Mechanical Planarization (CMP) is a process that is now routinely used to planarize metal as well dielectric films during the fabrication of integrated circuits. This process uses slurries comprised of fine abrasive particles, such as silica, ceria or alumina. The stability and performance of the slurries are influenced by the size and properties of these particles, which in turn are influenced by their synthesis route. Stability is important to improve slurry lifetime and minimize defects such as microscratching caused by particle agglomerates or large particle counts (LPC) during polishing. The rheological behavior of slurry affects the friction at the pad-particle-wafer interface and alters the material removal rate. It is, thus, necessary to carefully engineer the slurry characteristics to achieve good removal rate and planarity without causing defects. This paper reviews the published literature on the synthesis of abrasive particles used in the preparation of CMP slurries as well as stability and rheological characteristics of slurries made from these particles. A brief account of particle-film interactions and importance of LPC in wafer scratching is also provided.

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