Passivation of pinhole defect microelectrode arrays in ultrathin silica films immobilized on gold substrates

Piotr Macech, Jeanne E. Pemberton

Research output: Contribution to journalArticle

7 Scopus citations

Abstract

Nanoscopic defects present in ultrathin (~ 6 nm) silica films covalently attached to gold substrates through a gold oxide layer exhibit a voltammetric response consistent with a random array of ultramicroelectrodes. These pinholes can be passivated via electrochemical polymerization of phenol to create insulating poly(phenylene) oxide plugs as documented by atomic force microscopy and infrared reflectance-absorbance spectroscopy. Passivation of pinholes is ~ 99.5% complete after 550 voltammetric cycles of oxidative electropolymerization.

Original languageEnglish (US)
Pages (from-to)5399-5403
Number of pages5
JournalThin Solid Films
Volume517
Issue number18
DOIs
StatePublished - Jul 31 2009

Keywords

  • Atomic force microscopy
  • Electropolymerization
  • Fourier transform infrared spectroscopy
  • Insulating overlayer
  • Microelectrode array
  • Pinhole defect
  • Poly(phenylene) oxide
  • Silica

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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