Pattern evolution in shallow trench isolation chemical mechanical planarization via real-time shear and down forces spectral analyses

Yasa Sampurno, Fransisca Sudargho, Yun Zhuang, Toranosuke Ashizawa, Hiroyuki Morishima, Ara Philipossian

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

This study explores the transition of force spectral fingerprints of shallow trench isolation chemical mechanical planarization during early evolution of wafer topography and layer transition from silicon dioxide to silicon nitride. Polishing was done on a polisher and tribometer capable of measuring shear force and down force in real-time. Fast Fourier Transformation is performed to convert the force data from time domain to frequency domain and to illustrate the spectral amplitude distribution of the force. Such frequency spectra provide in-depth insights into the interactions among abrasive particles, pad and wafer. Shallow trench isolation patterned wafers are over-polished using cerium oxide slurry. Results show that shear force increases during polishing when the silicon dioxide layer is removed thus exposing the silicon nitride layer. Unique and consistent spectral fingerprints are generated showing significant changes in several fundamental peaks during the early evolution of wafer topography and subsequent layer transition to silicon nitride polishing. Variance of force is also plotted to show the progression of pattern evolution. Results show that a combination of unique spectral fingerprinting, coefficient of friction as well as analyses of force and its variance (based on shear and down force) can be used as to monitor in real-time the polishing progress during shallow trench isolation chemical mechanical planarization.

Original languageEnglish (US)
Pages (from-to)2857-2861
Number of pages5
JournalMicroelectronic Engineering
Volume88
Issue number9
DOIs
StatePublished - Sep 2011

Fingerprint

Chemical mechanical polishing
Polishing
isolation
Silicon nitride
shear
Silicon Dioxide
Topography
polishing
Silica
silicon nitrides
wafers
Cerium
transition layers
Abrasives
topography
Friction
silicon dioxide
Oxides
cerium oxides
tribometers

Keywords

  • Chemical-mechanical planarization
  • CMP
  • End point detection
  • Friction
  • Shallow trench isolation
  • STI

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

Cite this

Pattern evolution in shallow trench isolation chemical mechanical planarization via real-time shear and down forces spectral analyses. / Sampurno, Yasa; Sudargho, Fransisca; Zhuang, Yun; Ashizawa, Toranosuke; Morishima, Hiroyuki; Philipossian, Ara.

In: Microelectronic Engineering, Vol. 88, No. 9, 09.2011, p. 2857-2861.

Research output: Contribution to journalArticle

Sampurno, Yasa ; Sudargho, Fransisca ; Zhuang, Yun ; Ashizawa, Toranosuke ; Morishima, Hiroyuki ; Philipossian, Ara. / Pattern evolution in shallow trench isolation chemical mechanical planarization via real-time shear and down forces spectral analyses. In: Microelectronic Engineering. 2011 ; Vol. 88, No. 9. pp. 2857-2861.
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