Patterning of sub-50 nm perpendicular CoFeB/MgO-based magnetic tunnel junctions

Larysa Tryputen, Kun Hua Tu, Stephan K. Piotrowski, Mukund Bapna, Sara A. Majetich, Congli Sun, Paul M. Voyles, Hamid Almasi, Weigang Wang, Patricio Vargas, Jason S. Tresback, Caroline A. Ross

Research output: Contribution to journalArticle

5 Scopus citations

Abstract

Perpendicular magnetic tunnel junctions (p-MTJs) were patterned into nanopillars using electron-beam lithography to study their scaling and switching behaviour. Magnetoresistance measurements of annealed and unannealed p-MTJ films using scanning probe microscopy showed good agreement with Monte Carlo modeling. p-MTJ pillars demonstrated clear parallel magnetic states, both 'up' or both 'down' following AC-demagnetization. Significant variability in the resistance of p-MTJ pillars was observed and attributed to edge features generated during patterning or local inhomogeneity in the MgO layer.

Original languageEnglish (US)
Article number185302
JournalNanotechnology
Volume27
Issue number18
DOIs
StatePublished - Mar 23 2016

Keywords

  • magnetoresistance
  • metal nanopillars
  • nanofabrication
  • perpendicular magnetic tunnel junctions
  • spintronics

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Electrical and Electronic Engineering
  • Mechanical Engineering
  • Mechanics of Materials
  • Materials Science(all)

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  • Cite this

    Tryputen, L., Tu, K. H., Piotrowski, S. K., Bapna, M., Majetich, S. A., Sun, C., Voyles, P. M., Almasi, H., Wang, W., Vargas, P., Tresback, J. S., & Ross, C. A. (2016). Patterning of sub-50 nm perpendicular CoFeB/MgO-based magnetic tunnel junctions. Nanotechnology, 27(18), [185302]. https://doi.org/10.1088/0957-4484/27/18/185302