Performance analysis of a novel slurry injection system for oxide chemical mechanical planarization

L. Borucki, Y. Zhuang, Y. Sampurno, Ara Philipossian, S. Kreutzer-Schneeweiss

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

In this study, a novel slurry injection system (SIS) was installed on an Ebara F-REX200® polisher and its performance was analyzed for oxide chemical mechanical planarization process. The slurry injector contacts the pad with a light load and applies slurry in a thin layer at the device trailing edge using single or multiple injection points. Used slurry, rinse water and pad debris are then removed from the pad by the injector leading edge. Blanket 200-mm oxide wafers were polished using Cabot Microelectronics Corporation Semi-Sperse™ 25 slurry at different flow rates (100, 150 and 200 ml/min) on Dow IC1000™ k-groove and XY-perforated pads. The results show that at each flow rate, the oxide removal rate is enhanced sufficiently over the rate from the standard slurry applicator that the flow rate can be reduced by about 35% on the XY-perforated pad and 50% on the k-groove pad without sacrificing removal rate.

Original languageEnglish (US)
Title of host publicationECS Transactions
Pages591-596
Number of pages6
Volume52
Edition1
DOIs
StatePublished - 2013
Externally publishedYes
EventChina Semiconductor Technology International Conference 2013, CSTIC 2013 - Shanghai, China
Duration: Mar 19 2013Mar 21 2013

Other

OtherChina Semiconductor Technology International Conference 2013, CSTIC 2013
CountryChina
CityShanghai
Period3/19/133/21/13

Fingerprint

Chemical mechanical polishing
Flow rate
Oxides
Applicators
Debris
Microelectronics
Water
Industry

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Borucki, L., Zhuang, Y., Sampurno, Y., Philipossian, A., & Kreutzer-Schneeweiss, S. (2013). Performance analysis of a novel slurry injection system for oxide chemical mechanical planarization. In ECS Transactions (1 ed., Vol. 52, pp. 591-596) https://doi.org/10.1149/05201.0591ecst

Performance analysis of a novel slurry injection system for oxide chemical mechanical planarization. / Borucki, L.; Zhuang, Y.; Sampurno, Y.; Philipossian, Ara; Kreutzer-Schneeweiss, S.

ECS Transactions. Vol. 52 1. ed. 2013. p. 591-596.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Borucki, L, Zhuang, Y, Sampurno, Y, Philipossian, A & Kreutzer-Schneeweiss, S 2013, Performance analysis of a novel slurry injection system for oxide chemical mechanical planarization. in ECS Transactions. 1 edn, vol. 52, pp. 591-596, China Semiconductor Technology International Conference 2013, CSTIC 2013, Shanghai, China, 3/19/13. https://doi.org/10.1149/05201.0591ecst
Borucki L, Zhuang Y, Sampurno Y, Philipossian A, Kreutzer-Schneeweiss S. Performance analysis of a novel slurry injection system for oxide chemical mechanical planarization. In ECS Transactions. 1 ed. Vol. 52. 2013. p. 591-596 https://doi.org/10.1149/05201.0591ecst
Borucki, L. ; Zhuang, Y. ; Sampurno, Y. ; Philipossian, Ara ; Kreutzer-Schneeweiss, S. / Performance analysis of a novel slurry injection system for oxide chemical mechanical planarization. ECS Transactions. Vol. 52 1. ed. 2013. pp. 591-596
@inproceedings{ef9edd5287214d03a4d7cd4ab7594fee,
title = "Performance analysis of a novel slurry injection system for oxide chemical mechanical planarization",
abstract = "In this study, a novel slurry injection system (SIS) was installed on an Ebara F-REX200{\circledR} polisher and its performance was analyzed for oxide chemical mechanical planarization process. The slurry injector contacts the pad with a light load and applies slurry in a thin layer at the device trailing edge using single or multiple injection points. Used slurry, rinse water and pad debris are then removed from the pad by the injector leading edge. Blanket 200-mm oxide wafers were polished using Cabot Microelectronics Corporation Semi-Sperse™ 25 slurry at different flow rates (100, 150 and 200 ml/min) on Dow IC1000™ k-groove and XY-perforated pads. The results show that at each flow rate, the oxide removal rate is enhanced sufficiently over the rate from the standard slurry applicator that the flow rate can be reduced by about 35{\%} on the XY-perforated pad and 50{\%} on the k-groove pad without sacrificing removal rate.",
author = "L. Borucki and Y. Zhuang and Y. Sampurno and Ara Philipossian and S. Kreutzer-Schneeweiss",
year = "2013",
doi = "10.1149/05201.0591ecst",
language = "English (US)",
isbn = "9781607683810",
volume = "52",
pages = "591--596",
booktitle = "ECS Transactions",
edition = "1",

}

TY - GEN

T1 - Performance analysis of a novel slurry injection system for oxide chemical mechanical planarization

AU - Borucki, L.

AU - Zhuang, Y.

AU - Sampurno, Y.

AU - Philipossian, Ara

AU - Kreutzer-Schneeweiss, S.

PY - 2013

Y1 - 2013

N2 - In this study, a novel slurry injection system (SIS) was installed on an Ebara F-REX200® polisher and its performance was analyzed for oxide chemical mechanical planarization process. The slurry injector contacts the pad with a light load and applies slurry in a thin layer at the device trailing edge using single or multiple injection points. Used slurry, rinse water and pad debris are then removed from the pad by the injector leading edge. Blanket 200-mm oxide wafers were polished using Cabot Microelectronics Corporation Semi-Sperse™ 25 slurry at different flow rates (100, 150 and 200 ml/min) on Dow IC1000™ k-groove and XY-perforated pads. The results show that at each flow rate, the oxide removal rate is enhanced sufficiently over the rate from the standard slurry applicator that the flow rate can be reduced by about 35% on the XY-perforated pad and 50% on the k-groove pad without sacrificing removal rate.

AB - In this study, a novel slurry injection system (SIS) was installed on an Ebara F-REX200® polisher and its performance was analyzed for oxide chemical mechanical planarization process. The slurry injector contacts the pad with a light load and applies slurry in a thin layer at the device trailing edge using single or multiple injection points. Used slurry, rinse water and pad debris are then removed from the pad by the injector leading edge. Blanket 200-mm oxide wafers were polished using Cabot Microelectronics Corporation Semi-Sperse™ 25 slurry at different flow rates (100, 150 and 200 ml/min) on Dow IC1000™ k-groove and XY-perforated pads. The results show that at each flow rate, the oxide removal rate is enhanced sufficiently over the rate from the standard slurry applicator that the flow rate can be reduced by about 35% on the XY-perforated pad and 50% on the k-groove pad without sacrificing removal rate.

UR - http://www.scopus.com/inward/record.url?scp=84875928430&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84875928430&partnerID=8YFLogxK

U2 - 10.1149/05201.0591ecst

DO - 10.1149/05201.0591ecst

M3 - Conference contribution

AN - SCOPUS:84875928430

SN - 9781607683810

VL - 52

SP - 591

EP - 596

BT - ECS Transactions

ER -