Performance and reliability measures of floating gate analog memory cells

John Galbraith, W. Timothy Holman, Mark A. Neifeld

Research output: Contribution to conferencePaper

Abstract

Several floating gate analog memories have been proposed for use in integrated analog systems such as neural network implementations. This work proposes a set of three figures of merit that describe the performance and reliability of these memory cells. Programming Time, Storage Lifetime, and Failure Voltage are a set of empirically determined parameters that quantify the essential features of a generic analog memory cell without requiring detailed knowledge of the underlying semiconductor process. They can be used to compare different memory cell designs, and to predict the performance of analog systems.

Original languageEnglish (US)
Pages68-71
Number of pages4
StatePublished - Dec 1 1997
EventProceedings of the 1997 40th Midwest Symposium on Circuits and Systems. Part 1 (of 2) - Sacramento, CA, USA
Duration: Aug 3 1997Aug 6 1997

Other

OtherProceedings of the 1997 40th Midwest Symposium on Circuits and Systems. Part 1 (of 2)
CitySacramento, CA, USA
Period8/3/978/6/97

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Galbraith, J., Holman, W. T., & Neifeld, M. A. (1997). Performance and reliability measures of floating gate analog memory cells. 68-71. Paper presented at Proceedings of the 1997 40th Midwest Symposium on Circuits and Systems. Part 1 (of 2), Sacramento, CA, USA, .