Performance and reliability measures of floating gate analog memory cells

John Galbraith, W. Timothy Holman, Mark A Neifeld

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Several floating gate analog memories have been proposed for use in integrated analog systems such as neural network implementations. This work proposes a set of three figures of merit that describe the performance and reliability of these memory cells. Programming Time, Storage Lifetime, and Failure Voltage are a set of empirically determined parameters that quantify the essential features of a generic analog memory cell without requiring detailed knowledge of the underlying semiconductor process. They can be used to compare different memory cell designs, and to predict the performance of analog systems.

Original languageEnglish (US)
Title of host publicationMidwest Symposium on Circuits and Systems
Editors Anon
PublisherIEEE
Pages68-71
Number of pages4
Volume1
StatePublished - 1997
EventProceedings of the 1997 40th Midwest Symposium on Circuits and Systems. Part 1 (of 2) - Sacramento, CA, USA
Duration: Aug 3 1997Aug 6 1997

Other

OtherProceedings of the 1997 40th Midwest Symposium on Circuits and Systems. Part 1 (of 2)
CitySacramento, CA, USA
Period8/3/978/6/97

Fingerprint

Data storage equipment
Computer programming
Semiconductor materials
Neural networks
Electric potential

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Galbraith, J., Holman, W. T., & Neifeld, M. A. (1997). Performance and reliability measures of floating gate analog memory cells. In Anon (Ed.), Midwest Symposium on Circuits and Systems (Vol. 1, pp. 68-71). IEEE.

Performance and reliability measures of floating gate analog memory cells. / Galbraith, John; Holman, W. Timothy; Neifeld, Mark A.

Midwest Symposium on Circuits and Systems. ed. / Anon. Vol. 1 IEEE, 1997. p. 68-71.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Galbraith, J, Holman, WT & Neifeld, MA 1997, Performance and reliability measures of floating gate analog memory cells. in Anon (ed.), Midwest Symposium on Circuits and Systems. vol. 1, IEEE, pp. 68-71, Proceedings of the 1997 40th Midwest Symposium on Circuits and Systems. Part 1 (of 2), Sacramento, CA, USA, 8/3/97.
Galbraith J, Holman WT, Neifeld MA. Performance and reliability measures of floating gate analog memory cells. In Anon, editor, Midwest Symposium on Circuits and Systems. Vol. 1. IEEE. 1997. p. 68-71
Galbraith, John ; Holman, W. Timothy ; Neifeld, Mark A. / Performance and reliability measures of floating gate analog memory cells. Midwest Symposium on Circuits and Systems. editor / Anon. Vol. 1 IEEE, 1997. pp. 68-71
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