Performance improvement of circular-grating surface-emitting DBR lasers using an MQW structure with etch-stop layer

Mahmoud Fallahi, M. Dion, Z. Wasilewski, M. Buchanan, M. Nournia, J. Stapledon, R. Barber

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The authors demonstrate low threshold current high efficiency operation of circular-grating surface-emitting distributed Bragg reflector (CG-SE-DBR) lasers. A strained InGaAsIGaAs triple quantum well with an etch-stop layer was grown by MBE. Circular gratings are defined by electron beam lithography. A threshold current as low as 17mA and a pulsed output power > 170mW at approx.980nm wavelength are obtained.

Original languageEnglish (US)
Pages (from-to)1581-1582
Number of pages2
JournalElectronics Letters
Volume31
Issue number18
DOIs
StatePublished - 1995
Externally publishedYes

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DBR lasers
Electron beam lithography
Surface emitting lasers
Molecular beam epitaxy
Semiconductor quantum wells
Wavelength

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Performance improvement of circular-grating surface-emitting DBR lasers using an MQW structure with etch-stop layer. / Fallahi, Mahmoud; Dion, M.; Wasilewski, Z.; Buchanan, M.; Nournia, M.; Stapledon, J.; Barber, R.

In: Electronics Letters, Vol. 31, No. 18, 1995, p. 1581-1582.

Research output: Contribution to journalArticle

Fallahi, M, Dion, M, Wasilewski, Z, Buchanan, M, Nournia, M, Stapledon, J & Barber, R 1995, 'Performance improvement of circular-grating surface-emitting DBR lasers using an MQW structure with etch-stop layer', Electronics Letters, vol. 31, no. 18, pp. 1581-1582. https://doi.org/10.1049/el:19951045
Fallahi, Mahmoud ; Dion, M. ; Wasilewski, Z. ; Buchanan, M. ; Nournia, M. ; Stapledon, J. ; Barber, R. / Performance improvement of circular-grating surface-emitting DBR lasers using an MQW structure with etch-stop layer. In: Electronics Letters. 1995 ; Vol. 31, No. 18. pp. 1581-1582.
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