Performance improvement of circular-grating surface-emittingDBR lasers using an MQW structure with etch-stop layer

M. Fallahi, M. Dion, Z. Wasilewski, M. Buchanan, M. Nournia, J. Stapledon, R. Barber

Research output: Contribution to journalArticle

7 Scopus citations

Abstract

The authors demonstrate low threshold current high efficiency operation of circular-grating surface-emitting distributed Bragg reflector (CG-SE-DBR) lasers. A strained InGaAsIGaAs triple quantum well with an etch-stop layer was grown by MBE. Circular gratings are defined by electron beam lithography. A threshold current as low as 17mA and a pulsed output power > 170mW at ~980nm wavelength are obtained.

Original languageEnglish (US)
Pages (from-to)1581-1582
Number of pages2
JournalElectronics Letters
Volume31
Issue number18
DOIs
StatePublished - Aug 31 1995

Keywords

  • Distributed Bragg reflector lasers
  • Vertical cavity surface emitting lasers

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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