Phase-amplitude spectroscopy of GaAs polariton

J. Tignon, T. Hasche, M. V. Marquezini, D. S. Chemla, H. C. Schneider, F. Jahnke, S. W. Koch

Research output: Contribution to conferencePaper

Abstract

The polariton signature was observed in both the absorption and phase-amplitude spectra of very high quality bulk GaAs. The experimental findings are explained by a full solution of the Maxwell/semiconductor-Bloch equations, which particularly show that ΔLT and the exciton damping γ, cannot be read off in a simple way from the absorption spectrum. A high-quality 0.25 μm-thick GaAs layer clad between two AlGaAs layers was studied. To allow transmission experiments, a GaAs substrate was etched and the sample was AR-coated.

Original languageEnglish (US)
Pages31-32
Number of pages2
StatePublished - Jan 1 1999
EventProceedings of the 1999 Quantum Electronics and Laser Science Conference (QELS '99) - Baltimore, MD, USA
Duration: May 23 1999May 28 1999

Other

OtherProceedings of the 1999 Quantum Electronics and Laser Science Conference (QELS '99)
CityBaltimore, MD, USA
Period5/23/995/28/99

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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  • Cite this

    Tignon, J., Hasche, T., Marquezini, M. V., Chemla, D. S., Schneider, H. C., Jahnke, F., & Koch, S. W. (1999). Phase-amplitude spectroscopy of GaAs polariton. 31-32. Paper presented at Proceedings of the 1999 Quantum Electronics and Laser Science Conference (QELS '99), Baltimore, MD, USA, .