Phonon emission by nonequilibrium carriers in the gain region of an inverted semiconductor

G. Mohs, R. Binder, B. Fluegel, H. Giessen, N. Peyghambarian

Research output: Contribution to conferencePaper

Abstract

Carrier relaxation dynamics in the gain region of semiconductors are of interest not only from a fundamental point of view but also with respect to the basic limits of semiconductor lasers and optical amplifiers. Of particular importance are relaxation effects resulting from carrier-phonon scattering. This paper focus on the emission of LO-phonons by charge-carriers in a nonequilibrium distribution. The nonequilibrium distribution is generated in a cool electron hole plasma by spectral hole burning.

Original languageEnglish (US)
Pages158-159
Number of pages2
StatePublished - Jan 1 1996
EventProceedings of the 1996 6th Quantum Electronics and Laser Science Conference, QELS - Anaheim, CA, USA
Duration: Jun 2 1996Jun 7 1996

Other

OtherProceedings of the 1996 6th Quantum Electronics and Laser Science Conference, QELS
CityAnaheim, CA, USA
Period6/2/966/7/96

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Mohs, G., Binder, R., Fluegel, B., Giessen, H., & Peyghambarian, N. (1996). Phonon emission by nonequilibrium carriers in the gain region of an inverted semiconductor. 158-159. Paper presented at Proceedings of the 1996 6th Quantum Electronics and Laser Science Conference, QELS, Anaheim, CA, USA, .