Phonon emission by nonequilibrium carriers in the gain region of an inverted semiconductor

G. Mohs, Rudolf Binder, B. Fluegel, H. Giessen, Nasser N Peyghambarian

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

Carrier relaxation dynamics in the gain region of semiconductors are of interest not only from a fundamental point of view but also with respect to the basic limits of semiconductor lasers and optical amplifiers. Of particular importance are relaxation effects resulting from carrier-phonon scattering. This paper focus on the emission of LO-phonons by charge-carriers in a nonequilibrium distribution. The nonequilibrium distribution is generated in a cool electron hole plasma by spectral hole burning.

Original languageEnglish (US)
Title of host publicationConference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series
PublisherIEEE
Pages158-159
Number of pages2
Volume9
StatePublished - 1996
EventProceedings of the 1996 6th Quantum Electronics and Laser Science Conference, QELS - Anaheim, CA, USA
Duration: Jun 2 1996Jun 7 1996

Other

OtherProceedings of the 1996 6th Quantum Electronics and Laser Science Conference, QELS
CityAnaheim, CA, USA
Period6/2/966/7/96

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hole burning
light amplifiers
charge carriers
phonons
amplifiers
semiconductor lasers
scattering

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Mohs, G., Binder, R., Fluegel, B., Giessen, H., & Peyghambarian, N. N. (1996). Phonon emission by nonequilibrium carriers in the gain region of an inverted semiconductor. In Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series (Vol. 9, pp. 158-159). IEEE.

Phonon emission by nonequilibrium carriers in the gain region of an inverted semiconductor. / Mohs, G.; Binder, Rudolf; Fluegel, B.; Giessen, H.; Peyghambarian, Nasser N.

Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series. Vol. 9 IEEE, 1996. p. 158-159.

Research output: Chapter in Book/Report/Conference proceedingChapter

Mohs, G, Binder, R, Fluegel, B, Giessen, H & Peyghambarian, NN 1996, Phonon emission by nonequilibrium carriers in the gain region of an inverted semiconductor. in Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series. vol. 9, IEEE, pp. 158-159, Proceedings of the 1996 6th Quantum Electronics and Laser Science Conference, QELS, Anaheim, CA, USA, 6/2/96.
Mohs G, Binder R, Fluegel B, Giessen H, Peyghambarian NN. Phonon emission by nonequilibrium carriers in the gain region of an inverted semiconductor. In Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series. Vol. 9. IEEE. 1996. p. 158-159
Mohs, G. ; Binder, Rudolf ; Fluegel, B. ; Giessen, H. ; Peyghambarian, Nasser N. / Phonon emission by nonequilibrium carriers in the gain region of an inverted semiconductor. Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series. Vol. 9 IEEE, 1996. pp. 158-159
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