Abstract
The dynamics of strongly localized optical excitations in semiconductors is studied including electronphonon interaction. The coupled microscopic equations of motion for the interband polarization and the carrier distribution functions contain coherent and incoherent contributions. While the coherent part is solved through direct numerical integration, the incoherent one is treated by means of a generalized Monte Carlo simulation. The approach is illustrated for a simple model system. The temperature and excitation energy dependence of the optical dephasing rate is analyzed and the results are compared to those of alternative approaches.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 2561-2570 |
| Number of pages | 10 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 54 |
| Issue number | 4 |
| State | Published - 1996 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Condensed Matter Physics
Cite this
Phonon-induced dephasing of localized optical excitations. / Brinkmann, D.; Rossi, F.; Koch, Stephan W; Thomas, P.
In: Physical Review B - Condensed Matter and Materials Physics, Vol. 54, No. 4, 1996, p. 2561-2570.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Phonon-induced dephasing of localized optical excitations
AU - Brinkmann, D.
AU - Rossi, F.
AU - Koch, Stephan W
AU - Thomas, P.
PY - 1996
Y1 - 1996
N2 - The dynamics of strongly localized optical excitations in semiconductors is studied including electronphonon interaction. The coupled microscopic equations of motion for the interband polarization and the carrier distribution functions contain coherent and incoherent contributions. While the coherent part is solved through direct numerical integration, the incoherent one is treated by means of a generalized Monte Carlo simulation. The approach is illustrated for a simple model system. The temperature and excitation energy dependence of the optical dephasing rate is analyzed and the results are compared to those of alternative approaches.
AB - The dynamics of strongly localized optical excitations in semiconductors is studied including electronphonon interaction. The coupled microscopic equations of motion for the interband polarization and the carrier distribution functions contain coherent and incoherent contributions. While the coherent part is solved through direct numerical integration, the incoherent one is treated by means of a generalized Monte Carlo simulation. The approach is illustrated for a simple model system. The temperature and excitation energy dependence of the optical dephasing rate is analyzed and the results are compared to those of alternative approaches.
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UR - http://www.scopus.com/inward/citedby.url?scp=0004986646&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0004986646
VL - 54
SP - 2561
EP - 2570
JO - Physical Review B-Condensed Matter
JF - Physical Review B-Condensed Matter
SN - 0163-1829
IS - 4
ER -