Phonon-induced dephasing of localized optical excitations

D. Brinkmann, F. Rossi, Stephan W Koch, P. Thomas

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The dynamics of strongly localized optical excitations in semiconductors is studied including electronphonon interaction. The coupled microscopic equations of motion for the interband polarization and the carrier distribution functions contain coherent and incoherent contributions. While the coherent part is solved through direct numerical integration, the incoherent one is treated by means of a generalized Monte Carlo simulation. The approach is illustrated for a simple model system. The temperature and excitation energy dependence of the optical dephasing rate is analyzed and the results are compared to those of alternative approaches.

Original languageEnglish (US)
Pages (from-to)2561-2570
Number of pages10
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume54
Issue number4
StatePublished - 1996
Externally publishedYes

Fingerprint

Excitation energy
Photoexcitation
Beam plasma interactions
Equations of motion
Distribution functions
Polarization
Semiconductor materials
numerical integration
excitation
equations of motion
distribution functions
Temperature
polarization
simulation
interactions
temperature
Monte Carlo simulation
energy

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Phonon-induced dephasing of localized optical excitations. / Brinkmann, D.; Rossi, F.; Koch, Stephan W; Thomas, P.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 54, No. 4, 1996, p. 2561-2570.

Research output: Contribution to journalArticle

@article{8b200d7ae64a447eb5e4f3b16ca393cd,
title = "Phonon-induced dephasing of localized optical excitations",
abstract = "The dynamics of strongly localized optical excitations in semiconductors is studied including electronphonon interaction. The coupled microscopic equations of motion for the interband polarization and the carrier distribution functions contain coherent and incoherent contributions. While the coherent part is solved through direct numerical integration, the incoherent one is treated by means of a generalized Monte Carlo simulation. The approach is illustrated for a simple model system. The temperature and excitation energy dependence of the optical dephasing rate is analyzed and the results are compared to those of alternative approaches.",
author = "D. Brinkmann and F. Rossi and Koch, {Stephan W} and P. Thomas",
year = "1996",
language = "English (US)",
volume = "54",
pages = "2561--2570",
journal = "Physical Review B-Condensed Matter",
issn = "0163-1829",
publisher = "American Institute of Physics Publising LLC",
number = "4",

}

TY - JOUR

T1 - Phonon-induced dephasing of localized optical excitations

AU - Brinkmann, D.

AU - Rossi, F.

AU - Koch, Stephan W

AU - Thomas, P.

PY - 1996

Y1 - 1996

N2 - The dynamics of strongly localized optical excitations in semiconductors is studied including electronphonon interaction. The coupled microscopic equations of motion for the interband polarization and the carrier distribution functions contain coherent and incoherent contributions. While the coherent part is solved through direct numerical integration, the incoherent one is treated by means of a generalized Monte Carlo simulation. The approach is illustrated for a simple model system. The temperature and excitation energy dependence of the optical dephasing rate is analyzed and the results are compared to those of alternative approaches.

AB - The dynamics of strongly localized optical excitations in semiconductors is studied including electronphonon interaction. The coupled microscopic equations of motion for the interband polarization and the carrier distribution functions contain coherent and incoherent contributions. While the coherent part is solved through direct numerical integration, the incoherent one is treated by means of a generalized Monte Carlo simulation. The approach is illustrated for a simple model system. The temperature and excitation energy dependence of the optical dephasing rate is analyzed and the results are compared to those of alternative approaches.

UR - http://www.scopus.com/inward/record.url?scp=0004986646&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0004986646&partnerID=8YFLogxK

M3 - Article

VL - 54

SP - 2561

EP - 2570

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 0163-1829

IS - 4

ER -