Abstract
The dynamics of strongly localized optical excitations in semiconductors is studied including electron-phonon interaction. The coupled microscopic equations of motion for the interband polarization and the carrier distribution functions contain coherent and incoherent contributions. While the coherent part is solved through direct numerical integration, the incoherent one is treated by means of a generalized Monte Carlo simulation. The approach is illustrated for a simple model system. The temperature and excitation energy dependence of the optical dephasing rate is analyzed and the results are compared to those of alternative approaches.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 2561-2570 |
| Number of pages | 10 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 54 |
| Issue number | 4 |
| DOIs | |
| State | Published - Jan 1 1996 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
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Cite this
Brinkmann, D., Rossi, F., Koch, S., & Thomas, P. (1996). Phonon-induced dephasing of localized optical excitations. Physical Review B - Condensed Matter and Materials Physics, 54(4), 2561-2570. https://doi.org/10.1103/PhysRevB.54.2561