Phonon-induced spectral holes in the gain region of an inverted semiconductor

G. Mohs, R. Binder, B. Fluegel, H. Gießen, N. Peyghambarian

Research output: Contribution to journalArticlepeer-review

Abstract

Spectral-hole-burning experiments are performed in the gain region of an inverted semiconductor multiple quantum well. We find not only a spectral hole at the pump-pulse frequency but also replicas at higher frequencies. These replicas are qualitatively explained in terms of carrier-phonon interactions in which high-energy carriers relax into the optically induced spectral hole by LO-phonon emission.

Original languageEnglish (US)
Pages (from-to)1298-1301
Number of pages4
JournalJournal of the Optical Society of America B: Optical Physics
Volume13
Issue number6
DOIs
StatePublished - Jun 1996

ASJC Scopus subject areas

  • Statistical and Nonlinear Physics
  • Atomic and Molecular Physics, and Optics

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