Photo-induced and electrooptic properties of (PB,LA)(ZR,TI)O3 films for optical memories

D. Dimos, B. G. Potter, M. B. Sinclair, B. A. Tuttle, W. L. Warren

Research output: Contribution to journalArticle

13 Scopus citations

Abstract

Photo-induced hysteresis changes and electrooptic effects in sol-gel Pb(Zr,Ti)O3 (PZT) and (Pb,La)(Zr,Ti)O3 (PLZT) films have been studied in an effort to evaluate these materials for optical memory applications. The films exhibit two distinct, but related, types of photoinduced changes in their hysteresis behavior: 1) a photoinduced change in the coercive voltage and 2) a photoinduced suppression of the switchable polarization. Both types of photoinduced hysteresis changes are due to trapping of photo-generated charge carriers at sites which minimize internal depolarizing fields. The photoinduced changes are reproducible and stable and are, thus, suitable for optical memory applications. In addition, polarization-dependent changes in the refractive indices can be the basis of a nondestructive optical readout technique. To characterize these electrooptic effects, a waveguide refractometry technique has been used to independently determine field-induced changes in the ordinary and extraordinary indices. For an applied field sufficient to saturate the ferroelectric polarization (E = 125 kV/cm), the ratio of the extraordinary to ordinary index change (Δn,/Δn.) of a Pb(Zr0.53Ti0.47)O3 film was found to be -4/1, leading to a net birefringence change [Δ(n - nΔ] of -0.21.

Original languageEnglish (US)
Pages (from-to)47-58
Number of pages12
JournalIntegrated Ferroelectrics
Volume5
Issue number1
DOIs
StatePublished - Sep 1 1994
Externally publishedYes

Keywords

  • electrooptic
  • Ferroelectric films
  • optical memory
  • photoferroelectric

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Control and Systems Engineering
  • Ceramics and Composites
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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