Photo-induced and electrooptic properties of (Pb,La)(Zr,Ti)O3 films for optical memories

D. Dimos, Barrett G Potter, M. B. Sinclair, B. A. Tuttle, W. L. Warren

Research output: Chapter in Book/Report/Conference proceedingChapter

13 Citations (Scopus)

Abstract

Photo-induced hysteresis changes and electrooptic effects in sol-gel Pb(Zr,Ti)O3 (PZT) and (Pb,La)(Zr,Ti)O3 (PLZT) films have been studied in an effort to evaluate these materials for optical memory applications. The films exhibit two distinct, but related, types of photo-induced changes in their hysteresis behavior: 1) a photo-induced change in the coercive voltage and 2) a photo-induced suppression of the switchable polarization. Both types of photo-induced hysteresis changes are due to trapping of photo-generated charge carriers at sites which minimize internal depolarizing fields. The photo-induced changes are reproducible and stable and are, thus, suitable for optical memory applications. In addition, polarization-dependent changes in the refractive indices can be the basis of a nondestructive optical readout technique. To characterize these electrooptic effects, a waveguide refractometry technique has been used to independently determine field-induced changes in the ordinary and extraordinary indices. For an applied field sufficient to saturate the ferroelectric polarization (E = 125 kV/cm), the ratio of the extraordinary to ordinary index change (Δne/Δno) of a Pb(Zr0.53Ti0.47)O3 film was found to be -4/1, leading to a net birefringence change [Δ(ne - no)] of -0.21.

Original languageEnglish (US)
Title of host publicationIntegrated Ferroelectrics
PublisherGordon & Breach Science Publ Inc
Pages47-58
Number of pages12
Volume5
Edition1 pt 3
StatePublished - 1994
Externally publishedYes
EventProceedings of the 5th International Symposium on Integrated Ferroelectrics. Part 3 - Colorado Springs, CO, USA
Duration: Apr 1 1993Apr 1 1993

Other

OtherProceedings of the 5th International Symposium on Integrated Ferroelectrics. Part 3
CityColorado Springs, CO, USA
Period4/1/934/1/93

Fingerprint

Optical data storage
Electrooptical effects
electro-optics
Hysteresis
hysteresis
Polarization
polarization
Birefringence
Charge carriers
Ferroelectric materials
Sol-gels
birefringence
readout
charge carriers
Refractive index
Waveguides
trapping
retarding
gels
refractivity

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Physics and Astronomy (miscellaneous)
  • Condensed Matter Physics

Cite this

Dimos, D., Potter, B. G., Sinclair, M. B., Tuttle, B. A., & Warren, W. L. (1994). Photo-induced and electrooptic properties of (Pb,La)(Zr,Ti)O3 films for optical memories. In Integrated Ferroelectrics (1 pt 3 ed., Vol. 5, pp. 47-58). Gordon & Breach Science Publ Inc.

Photo-induced and electrooptic properties of (Pb,La)(Zr,Ti)O3 films for optical memories. / Dimos, D.; Potter, Barrett G; Sinclair, M. B.; Tuttle, B. A.; Warren, W. L.

Integrated Ferroelectrics. Vol. 5 1 pt 3. ed. Gordon & Breach Science Publ Inc, 1994. p. 47-58.

Research output: Chapter in Book/Report/Conference proceedingChapter

Dimos, D, Potter, BG, Sinclair, MB, Tuttle, BA & Warren, WL 1994, Photo-induced and electrooptic properties of (Pb,La)(Zr,Ti)O3 films for optical memories. in Integrated Ferroelectrics. 1 pt 3 edn, vol. 5, Gordon & Breach Science Publ Inc, pp. 47-58, Proceedings of the 5th International Symposium on Integrated Ferroelectrics. Part 3, Colorado Springs, CO, USA, 4/1/93.
Dimos D, Potter BG, Sinclair MB, Tuttle BA, Warren WL. Photo-induced and electrooptic properties of (Pb,La)(Zr,Ti)O3 films for optical memories. In Integrated Ferroelectrics. 1 pt 3 ed. Vol. 5. Gordon & Breach Science Publ Inc. 1994. p. 47-58
Dimos, D. ; Potter, Barrett G ; Sinclair, M. B. ; Tuttle, B. A. ; Warren, W. L. / Photo-induced and electrooptic properties of (Pb,La)(Zr,Ti)O3 films for optical memories. Integrated Ferroelectrics. Vol. 5 1 pt 3. ed. Gordon & Breach Science Publ Inc, 1994. pp. 47-58
@inbook{e07127c2c75641ccb6cf2acf5340d37c,
title = "Photo-induced and electrooptic properties of (Pb,La)(Zr,Ti)O3 films for optical memories",
abstract = "Photo-induced hysteresis changes and electrooptic effects in sol-gel Pb(Zr,Ti)O3 (PZT) and (Pb,La)(Zr,Ti)O3 (PLZT) films have been studied in an effort to evaluate these materials for optical memory applications. The films exhibit two distinct, but related, types of photo-induced changes in their hysteresis behavior: 1) a photo-induced change in the coercive voltage and 2) a photo-induced suppression of the switchable polarization. Both types of photo-induced hysteresis changes are due to trapping of photo-generated charge carriers at sites which minimize internal depolarizing fields. The photo-induced changes are reproducible and stable and are, thus, suitable for optical memory applications. In addition, polarization-dependent changes in the refractive indices can be the basis of a nondestructive optical readout technique. To characterize these electrooptic effects, a waveguide refractometry technique has been used to independently determine field-induced changes in the ordinary and extraordinary indices. For an applied field sufficient to saturate the ferroelectric polarization (E = 125 kV/cm), the ratio of the extraordinary to ordinary index change (Δne/Δno) of a Pb(Zr0.53Ti0.47)O3 film was found to be -4/1, leading to a net birefringence change [Δ(ne - no)] of -0.21.",
author = "D. Dimos and Potter, {Barrett G} and Sinclair, {M. B.} and Tuttle, {B. A.} and Warren, {W. L.}",
year = "1994",
language = "English (US)",
volume = "5",
pages = "47--58",
booktitle = "Integrated Ferroelectrics",
publisher = "Gordon & Breach Science Publ Inc",
edition = "1 pt 3",

}

TY - CHAP

T1 - Photo-induced and electrooptic properties of (Pb,La)(Zr,Ti)O3 films for optical memories

AU - Dimos, D.

AU - Potter, Barrett G

AU - Sinclair, M. B.

AU - Tuttle, B. A.

AU - Warren, W. L.

PY - 1994

Y1 - 1994

N2 - Photo-induced hysteresis changes and electrooptic effects in sol-gel Pb(Zr,Ti)O3 (PZT) and (Pb,La)(Zr,Ti)O3 (PLZT) films have been studied in an effort to evaluate these materials for optical memory applications. The films exhibit two distinct, but related, types of photo-induced changes in their hysteresis behavior: 1) a photo-induced change in the coercive voltage and 2) a photo-induced suppression of the switchable polarization. Both types of photo-induced hysteresis changes are due to trapping of photo-generated charge carriers at sites which minimize internal depolarizing fields. The photo-induced changes are reproducible and stable and are, thus, suitable for optical memory applications. In addition, polarization-dependent changes in the refractive indices can be the basis of a nondestructive optical readout technique. To characterize these electrooptic effects, a waveguide refractometry technique has been used to independently determine field-induced changes in the ordinary and extraordinary indices. For an applied field sufficient to saturate the ferroelectric polarization (E = 125 kV/cm), the ratio of the extraordinary to ordinary index change (Δne/Δno) of a Pb(Zr0.53Ti0.47)O3 film was found to be -4/1, leading to a net birefringence change [Δ(ne - no)] of -0.21.

AB - Photo-induced hysteresis changes and electrooptic effects in sol-gel Pb(Zr,Ti)O3 (PZT) and (Pb,La)(Zr,Ti)O3 (PLZT) films have been studied in an effort to evaluate these materials for optical memory applications. The films exhibit two distinct, but related, types of photo-induced changes in their hysteresis behavior: 1) a photo-induced change in the coercive voltage and 2) a photo-induced suppression of the switchable polarization. Both types of photo-induced hysteresis changes are due to trapping of photo-generated charge carriers at sites which minimize internal depolarizing fields. The photo-induced changes are reproducible and stable and are, thus, suitable for optical memory applications. In addition, polarization-dependent changes in the refractive indices can be the basis of a nondestructive optical readout technique. To characterize these electrooptic effects, a waveguide refractometry technique has been used to independently determine field-induced changes in the ordinary and extraordinary indices. For an applied field sufficient to saturate the ferroelectric polarization (E = 125 kV/cm), the ratio of the extraordinary to ordinary index change (Δne/Δno) of a Pb(Zr0.53Ti0.47)O3 film was found to be -4/1, leading to a net birefringence change [Δ(ne - no)] of -0.21.

UR - http://www.scopus.com/inward/record.url?scp=0028553423&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0028553423&partnerID=8YFLogxK

M3 - Chapter

AN - SCOPUS:0028553423

VL - 5

SP - 47

EP - 58

BT - Integrated Ferroelectrics

PB - Gordon & Breach Science Publ Inc

ER -