Photoluminescence and reflectance studies of exciton transitions in wurtzite GaN under pressure

Z. X. Liu, Stanley K H Pau, K. Syassen, J. Kuhl, W. Kim, H. Morkoç, M. A. Khan, C. J. Sun

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

We have measured photoluminescence (PL) and reflectance spectra of high-quality wurtzite GaN on sapphire at pressures up to 8 GPa (T = 10 K). All three intrinsic exciton transitions arising from the A, B, and C interband transitions were observed in reflectance measurements. The PL spectra are dominated by the A and B free exciton transitions and the recombination of an exciton bound to a neutral donor. Transitions due to the excited n = 2 state of the A exciton and the first- and second-order LO phonon replicas of the A free exciton were also resolved. The pressure dependence of the A band gap and exciton binding energy is obtained from the intrinsic exciton energies. The experimental results clearly reveal a sample-dependent change of the biaxial strain in the GaN layers with increasing hydrostatic pressure.

Original languageEnglish (US)
Pages (from-to)6696-6699
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume58
Issue number11
StatePublished - Sep 15 1998
Externally publishedYes

Fingerprint

Electron transitions
Excitons
wurtzite
Photoluminescence
excitons
reflectance
photoluminescence
Reflectometers
Aluminum Oxide
Hydrostatic pressure
LDS 751
Binding energy
replicas
Sapphire
hydrostatic pressure
pressure dependence
sapphire
Energy gap
binding energy

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Photoluminescence and reflectance studies of exciton transitions in wurtzite GaN under pressure. / Liu, Z. X.; Pau, Stanley K H; Syassen, K.; Kuhl, J.; Kim, W.; Morkoç, H.; Khan, M. A.; Sun, C. J.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 58, No. 11, 15.09.1998, p. 6696-6699.

Research output: Contribution to journalArticle

Liu, ZX, Pau, SKH, Syassen, K, Kuhl, J, Kim, W, Morkoç, H, Khan, MA & Sun, CJ 1998, 'Photoluminescence and reflectance studies of exciton transitions in wurtzite GaN under pressure', Physical Review B - Condensed Matter and Materials Physics, vol. 58, no. 11, pp. 6696-6699.
Liu, Z. X. ; Pau, Stanley K H ; Syassen, K. ; Kuhl, J. ; Kim, W. ; Morkoç, H. ; Khan, M. A. ; Sun, C. J. / Photoluminescence and reflectance studies of exciton transitions in wurtzite GaN under pressure. In: Physical Review B - Condensed Matter and Materials Physics. 1998 ; Vol. 58, No. 11. pp. 6696-6699.
@article{35f32ef32a46449f8a92ac694991aeb8,
title = "Photoluminescence and reflectance studies of exciton transitions in wurtzite GaN under pressure",
abstract = "We have measured photoluminescence (PL) and reflectance spectra of high-quality wurtzite GaN on sapphire at pressures up to 8 GPa (T = 10 K). All three intrinsic exciton transitions arising from the A, B, and C interband transitions were observed in reflectance measurements. The PL spectra are dominated by the A and B free exciton transitions and the recombination of an exciton bound to a neutral donor. Transitions due to the excited n = 2 state of the A exciton and the first- and second-order LO phonon replicas of the A free exciton were also resolved. The pressure dependence of the A band gap and exciton binding energy is obtained from the intrinsic exciton energies. The experimental results clearly reveal a sample-dependent change of the biaxial strain in the GaN layers with increasing hydrostatic pressure.",
author = "Liu, {Z. X.} and Pau, {Stanley K H} and K. Syassen and J. Kuhl and W. Kim and H. Morko{\cc} and Khan, {M. A.} and Sun, {C. J.}",
year = "1998",
month = "9",
day = "15",
language = "English (US)",
volume = "58",
pages = "6696--6699",
journal = "Physical Review B-Condensed Matter",
issn = "0163-1829",
publisher = "American Institute of Physics Publising LLC",
number = "11",

}

TY - JOUR

T1 - Photoluminescence and reflectance studies of exciton transitions in wurtzite GaN under pressure

AU - Liu, Z. X.

AU - Pau, Stanley K H

AU - Syassen, K.

AU - Kuhl, J.

AU - Kim, W.

AU - Morkoç, H.

AU - Khan, M. A.

AU - Sun, C. J.

PY - 1998/9/15

Y1 - 1998/9/15

N2 - We have measured photoluminescence (PL) and reflectance spectra of high-quality wurtzite GaN on sapphire at pressures up to 8 GPa (T = 10 K). All three intrinsic exciton transitions arising from the A, B, and C interband transitions were observed in reflectance measurements. The PL spectra are dominated by the A and B free exciton transitions and the recombination of an exciton bound to a neutral donor. Transitions due to the excited n = 2 state of the A exciton and the first- and second-order LO phonon replicas of the A free exciton were also resolved. The pressure dependence of the A band gap and exciton binding energy is obtained from the intrinsic exciton energies. The experimental results clearly reveal a sample-dependent change of the biaxial strain in the GaN layers with increasing hydrostatic pressure.

AB - We have measured photoluminescence (PL) and reflectance spectra of high-quality wurtzite GaN on sapphire at pressures up to 8 GPa (T = 10 K). All three intrinsic exciton transitions arising from the A, B, and C interband transitions were observed in reflectance measurements. The PL spectra are dominated by the A and B free exciton transitions and the recombination of an exciton bound to a neutral donor. Transitions due to the excited n = 2 state of the A exciton and the first- and second-order LO phonon replicas of the A free exciton were also resolved. The pressure dependence of the A band gap and exciton binding energy is obtained from the intrinsic exciton energies. The experimental results clearly reveal a sample-dependent change of the biaxial strain in the GaN layers with increasing hydrostatic pressure.

UR - http://www.scopus.com/inward/record.url?scp=0000716405&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000716405&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0000716405

VL - 58

SP - 6696

EP - 6699

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 0163-1829

IS - 11

ER -