Photoluminescence in Chemical Vapor Deposited ZnS

Insight into electronic defects

John S. McCloy, Barrett G Potter

Research output: Contribution to journalArticle

26 Citations (Scopus)

Abstract

Photoluminescence spectra taken from chemical vapor deposited (CVD) ZnS are shown to exhibit sub-band-gap emission bands characteristic of isoelectronic oxygen defects. The emission spectra vary spatially with position and orientation with respect to the major axis of CVD growth. These data suggest that a complex set of defects exist in the band gap of CVD ZnS whose structural nature is highly dependent upon local deposition and growth conditions, contributing to inherent heterogeneity in optical behavior throughout the material.

Original languageEnglish (US)
Pages (from-to)1273-1278
Number of pages6
JournalOptical Materials Express
Volume3
Issue number9
DOIs
StatePublished - 2013

Fingerprint

Photoluminescence
Vapors
Defects
Energy gap
Oxygen

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Photoluminescence in Chemical Vapor Deposited ZnS : Insight into electronic defects. / McCloy, John S.; Potter, Barrett G.

In: Optical Materials Express, Vol. 3, No. 9, 2013, p. 1273-1278.

Research output: Contribution to journalArticle

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