Photoluminescence in Chemical Vapor Deposited ZnS: Insight into electronic defects

John S. McCloy; Barrett G. Potter

doi:10.1364/OME.3.001273

Photoluminescence in Chemical Vapor Deposited ZnS: Insight into electronic defects

John S. McCloy, Barrett G. Potter

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

30 Scopus citations

Abstract

Photoluminescence spectra taken from chemical vapor deposited (CVD) ZnS are shown to exhibit sub-band-gap emission bands characteristic of isoelectronic oxygen defects. The emission spectra vary spatially with position and orientation with respect to the major axis of CVD growth. These data suggest that a complex set of defects exist in the band gap of CVD ZnS whose structural nature is highly dependent upon local deposition and growth conditions, contributing to inherent heterogeneity in optical behavior throughout the material.

Original language	English (US)
Pages (from-to)	1273-1278
Number of pages	6
Journal	Optical Materials Express
Volume	3
Issue number	9
DOIs	https://doi.org/10.1364/OME.3.001273
State	Published - 2013

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

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10.1364/OME.3.001273

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@article{a905f9720e4b4d1f96f2cfc8f2bd2782,

title = "Photoluminescence in Chemical Vapor Deposited ZnS: Insight into electronic defects",

abstract = "Photoluminescence spectra taken from chemical vapor deposited (CVD) ZnS are shown to exhibit sub-band-gap emission bands characteristic of isoelectronic oxygen defects. The emission spectra vary spatially with position and orientation with respect to the major axis of CVD growth. These data suggest that a complex set of defects exist in the band gap of CVD ZnS whose structural nature is highly dependent upon local deposition and growth conditions, contributing to inherent heterogeneity in optical behavior throughout the material.",

author = "McCloy, {John S.} and Potter, {Barrett G.}",

year = "2013",

doi = "10.1364/OME.3.001273",

language = "English (US)",

volume = "3",

pages = "1273--1278",

journal = "Optical Materials Express",

issn = "2159-3930",

publisher = "The Optical Society",

number = "9",

}

TY - JOUR

T1 - Photoluminescence in Chemical Vapor Deposited ZnS

T2 - Insight into electronic defects

AU - McCloy, John S.

AU - Potter, Barrett G.

PY - 2013

Y1 - 2013

N2 - Photoluminescence spectra taken from chemical vapor deposited (CVD) ZnS are shown to exhibit sub-band-gap emission bands characteristic of isoelectronic oxygen defects. The emission spectra vary spatially with position and orientation with respect to the major axis of CVD growth. These data suggest that a complex set of defects exist in the band gap of CVD ZnS whose structural nature is highly dependent upon local deposition and growth conditions, contributing to inherent heterogeneity in optical behavior throughout the material.

AB - Photoluminescence spectra taken from chemical vapor deposited (CVD) ZnS are shown to exhibit sub-band-gap emission bands characteristic of isoelectronic oxygen defects. The emission spectra vary spatially with position and orientation with respect to the major axis of CVD growth. These data suggest that a complex set of defects exist in the band gap of CVD ZnS whose structural nature is highly dependent upon local deposition and growth conditions, contributing to inherent heterogeneity in optical behavior throughout the material.

UR - http://www.scopus.com/inward/record.url?scp=84884186879&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84884186879&partnerID=8YFLogxK

U2 - 10.1364/OME.3.001273

DO - 10.1364/OME.3.001273

M3 - Article

AN - SCOPUS:84884186879

VL - 3

SP - 1273

EP - 1278

JO - Optical Materials Express

JF - Optical Materials Express

SN - 2159-3930

IS - 9

ER -