Abstract
Photoluminescence spectra taken from chemical vapor deposited (CVD) ZnS are shown to exhibit sub-band-gap emission bands characteristic of isoelectronic oxygen defects. The emission spectra vary spatially with position and orientation with respect to the major axis of CVD growth. These data suggest that a complex set of defects exist in the band gap of CVD ZnS whose structural nature is highly dependent upon local deposition and growth conditions, contributing to inherent heterogeneity in optical behavior throughout the material.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1273-1278 |
| Number of pages | 6 |
| Journal | Optical Materials Express |
| Volume | 3 |
| Issue number | 9 |
| DOIs | |
| State | Published - Sep 20 2013 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
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McCloy, J. S., & Potter, B. G. (2013). Photoluminescence in Chemical Vapor Deposited ZnS: Insight into electronic defects. Optical Materials Express, 3(9), 1273-1278. https://doi.org/10.1364/OME.3.001273