Photoresist thermal stability measurements using laser scatterometry

Robert A Norwood, D. R. Holcomb, C. J. Sobodacha, T. J. Lynch

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Thermal stability of photoresists has been measured using laser scatterometry. This new laser scatterometry technique is more rapid and more sensitive than scanning electron microscopy (SEM) methods. Patterned resists are slowly heated while various diffraction order intensities are measured. Changes in the diffraction intensities correlate well with thermal stabilities measured by SEM methods.

Original languageEnglish (US)
Title of host publicationAdvances in Resist Technology and Processing XI
PublisherSPIE
Pages765-773
Number of pages9
Volume2195
ISBN (Electronic)9780819414908
DOIs
StatePublished - May 16 1994
Externally publishedYes
EventAdvances in Resist Technology and Processing XI 1994 - San Jose, United States
Duration: Feb 27 1994Mar 4 1994

Other

OtherAdvances in Resist Technology and Processing XI 1994
CountryUnited States
CitySan Jose
Period2/27/943/4/94

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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