Photoresist thermal stability measurements using laser scatterometry

Robert A Norwood, D. R. Holcomb, C. J. Sobodacha, T. J. Lynch

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Thermal stability of photoresists has been measured using laser scatterometry. This new laser scatterometry technique is more rapid and more sensitive than scanning electron microscopy (SEM) methods. Patterned resists are slowly heated while various diffraction order intensities are measured. Changes in the diffraction intensities correlate well with thermal stabilities measured by SEM methods.

Original languageEnglish (US)
Title of host publicationAdvances in Resist Technology and Processing XI
PublisherSPIE
Pages765-773
Number of pages9
Volume2195
ISBN (Electronic)9780819414908
DOIs
StatePublished - May 16 1994
Externally publishedYes
EventAdvances in Resist Technology and Processing XI 1994 - San Jose, United States
Duration: Feb 27 1994Mar 4 1994

Other

OtherAdvances in Resist Technology and Processing XI 1994
CountryUnited States
CitySan Jose
Period2/27/943/4/94

Fingerprint

Scatterometry
Thermal Stability
Photoresist
Photoresists
Scanning Electron Microscopy
photoresists
Diffraction
Thermodynamic stability
thermal stability
Laser
Scanning electron microscopy
scanning electron microscopy
Lasers
diffraction
Resist
Correlate
lasers

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Norwood, R. A., Holcomb, D. R., Sobodacha, C. J., & Lynch, T. J. (1994). Photoresist thermal stability measurements using laser scatterometry. In Advances in Resist Technology and Processing XI (Vol. 2195, pp. 765-773). SPIE. https://doi.org/10.1117/12.175389

Photoresist thermal stability measurements using laser scatterometry. / Norwood, Robert A; Holcomb, D. R.; Sobodacha, C. J.; Lynch, T. J.

Advances in Resist Technology and Processing XI. Vol. 2195 SPIE, 1994. p. 765-773.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Norwood, RA, Holcomb, DR, Sobodacha, CJ & Lynch, TJ 1994, Photoresist thermal stability measurements using laser scatterometry. in Advances in Resist Technology and Processing XI. vol. 2195, SPIE, pp. 765-773, Advances in Resist Technology and Processing XI 1994, San Jose, United States, 2/27/94. https://doi.org/10.1117/12.175389
Norwood RA, Holcomb DR, Sobodacha CJ, Lynch TJ. Photoresist thermal stability measurements using laser scatterometry. In Advances in Resist Technology and Processing XI. Vol. 2195. SPIE. 1994. p. 765-773 https://doi.org/10.1117/12.175389
Norwood, Robert A ; Holcomb, D. R. ; Sobodacha, C. J. ; Lynch, T. J. / Photoresist thermal stability measurements using laser scatterometry. Advances in Resist Technology and Processing XI. Vol. 2195 SPIE, 1994. pp. 765-773
@inproceedings{b06077a8cd0a4e99b6ba74a68fcc0da2,
title = "Photoresist thermal stability measurements using laser scatterometry",
abstract = "Thermal stability of photoresists has been measured using laser scatterometry. This new laser scatterometry technique is more rapid and more sensitive than scanning electron microscopy (SEM) methods. Patterned resists are slowly heated while various diffraction order intensities are measured. Changes in the diffraction intensities correlate well with thermal stabilities measured by SEM methods.",
author = "Norwood, {Robert A} and Holcomb, {D. R.} and Sobodacha, {C. J.} and Lynch, {T. J.}",
year = "1994",
month = "5",
day = "16",
doi = "10.1117/12.175389",
language = "English (US)",
volume = "2195",
pages = "765--773",
booktitle = "Advances in Resist Technology and Processing XI",
publisher = "SPIE",

}

TY - GEN

T1 - Photoresist thermal stability measurements using laser scatterometry

AU - Norwood, Robert A

AU - Holcomb, D. R.

AU - Sobodacha, C. J.

AU - Lynch, T. J.

PY - 1994/5/16

Y1 - 1994/5/16

N2 - Thermal stability of photoresists has been measured using laser scatterometry. This new laser scatterometry technique is more rapid and more sensitive than scanning electron microscopy (SEM) methods. Patterned resists are slowly heated while various diffraction order intensities are measured. Changes in the diffraction intensities correlate well with thermal stabilities measured by SEM methods.

AB - Thermal stability of photoresists has been measured using laser scatterometry. This new laser scatterometry technique is more rapid and more sensitive than scanning electron microscopy (SEM) methods. Patterned resists are slowly heated while various diffraction order intensities are measured. Changes in the diffraction intensities correlate well with thermal stabilities measured by SEM methods.

UR - http://www.scopus.com/inward/record.url?scp=84948820625&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84948820625&partnerID=8YFLogxK

U2 - 10.1117/12.175389

DO - 10.1117/12.175389

M3 - Conference contribution

VL - 2195

SP - 765

EP - 773

BT - Advances in Resist Technology and Processing XI

PB - SPIE

ER -