Physics and modeling of fundamental CMP phenomena

L. Borucki, A. Philipossian, Y. Zhuang

Research output: Contribution to conferencePaper

Abstract

The implications of a theory of lubricated pad asperity wafer contact are traced through several fundamental areas of chemical-mechanical polishing. The hypothesized existence of a nanolubrication layer underlies a high accuracy model of polish rates. It also provides a quantitative explanation of a power law relationship between the coefficient of friction and a measure of pad surface flattening. The theory may further be useful for interpreting friction changes during polishing, and may explain the mechanism by which the elastic vibrational frequency of the polishing pad shows up in shear force spectral data.

Original languageEnglish (US)
Pages175-180
Number of pages6
StatePublished - Dec 1 2005
Event22nd International VLSI Multilevel Interconnection Conference, VMIC 2005 - Fremont, CA, United States
Duration: Oct 4 2005Oct 6 2005

Other

Other22nd International VLSI Multilevel Interconnection Conference, VMIC 2005
CountryUnited States
CityFremont, CA
Period10/4/0510/6/05

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ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Borucki, L., Philipossian, A., & Zhuang, Y. (2005). Physics and modeling of fundamental CMP phenomena. 175-180. Paper presented at 22nd International VLSI Multilevel Interconnection Conference, VMIC 2005, Fremont, CA, United States.