Physics of 1.3 μm(GaIn)(NAs)/GaAs semiconductor lasers

M. Hofmann, N. Gerhardt, A. Wagner, W. Stolz, Stephan W Koch, W. W. Rühle, Jorg Hader, Jerome V Moloney, H. C. Schneider, W. W. Chow

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The emission dynamics of 1.3 οm (GaIn)(NAs)/GaAs vertical-cavity surface-emitting lasers (VCSEL) was studied and their optical gain characteristics were investigated. The gain spectra for a ridge-waveguide edge-emitting structure grown by molecular beam epitaxy were observed for the purpose. The experimentally obtained gain spectra were in confirmation with those observed theoretically for elevated carrier densities.

Original languageEnglish (US)
Title of host publicationConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Pages326-327
Number of pages2
Volume1
StatePublished - 2001
Externally publishedYes
Event14th Annual Meeting of the IEEE Lasers and Electro-Optics Society - San Diego, CA, United States
Duration: Nov 11 2001Nov 15 2001

Other

Other14th Annual Meeting of the IEEE Lasers and Electro-Optics Society
CountryUnited States
CitySan Diego, CA
Period11/11/0111/15/01

Fingerprint

Ridge waveguides
Optical gain
Surface emitting lasers
Molecular beam epitaxy
Carrier concentration
Semiconductor lasers
Physics

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering

Cite this

Hofmann, M., Gerhardt, N., Wagner, A., Stolz, W., Koch, S. W., Rühle, W. W., ... Chow, W. W. (2001). Physics of 1.3 μm(GaIn)(NAs)/GaAs semiconductor lasers. In Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS (Vol. 1, pp. 326-327)

Physics of 1.3 μm(GaIn)(NAs)/GaAs semiconductor lasers. / Hofmann, M.; Gerhardt, N.; Wagner, A.; Stolz, W.; Koch, Stephan W; Rühle, W. W.; Hader, Jorg; Moloney, Jerome V; Schneider, H. C.; Chow, W. W.

Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS. Vol. 1 2001. p. 326-327.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hofmann, M, Gerhardt, N, Wagner, A, Stolz, W, Koch, SW, Rühle, WW, Hader, J, Moloney, JV, Schneider, HC & Chow, WW 2001, Physics of 1.3 μm(GaIn)(NAs)/GaAs semiconductor lasers. in Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS. vol. 1, pp. 326-327, 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society, San Diego, CA, United States, 11/11/01.
Hofmann M, Gerhardt N, Wagner A, Stolz W, Koch SW, Rühle WW et al. Physics of 1.3 μm(GaIn)(NAs)/GaAs semiconductor lasers. In Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS. Vol. 1. 2001. p. 326-327
Hofmann, M. ; Gerhardt, N. ; Wagner, A. ; Stolz, W. ; Koch, Stephan W ; Rühle, W. W. ; Hader, Jorg ; Moloney, Jerome V ; Schneider, H. C. ; Chow, W. W. / Physics of 1.3 μm(GaIn)(NAs)/GaAs semiconductor lasers. Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS. Vol. 1 2001. pp. 326-327
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