Physics of 1.3 μm(GaIn)(NAs)/GaAs semiconductor lasers

M. Hofmann, N. Gerhardt, A. Wagner, W. Stolz, S. W. Koch, W. W. Rühle, J. Hader, J. V. Moloney, H. C. Schneider, W. W. Chow

Research output: Contribution to journalConference article

Abstract

The emission dynamics of 1.3 οm (GaIn)(NAs)/GaAs vertical-cavity surface-emitting lasers (VCSEL) was studied and their optical gain characteristics were investigated. The gain spectra for a ridge-waveguide edge-emitting structure grown by molecular beam epitaxy were observed for the purpose. The experimentally obtained gain spectra were in confirmation with those observed theoretically for elevated carrier densities.

Original languageEnglish (US)
Pages (from-to)326-327
Number of pages2
JournalConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume1
StatePublished - Dec 1 2001
Event14th Annual Meeting of the IEEE Lasers and Electro-Optics Society - San Diego, CA, United States
Duration: Nov 11 2001Nov 15 2001

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Hofmann, M., Gerhardt, N., Wagner, A., Stolz, W., Koch, S. W., Rühle, W. W., Hader, J., Moloney, J. V., Schneider, H. C., & Chow, W. W. (2001). Physics of 1.3 μm(GaIn)(NAs)/GaAs semiconductor lasers. Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, 1, 326-327.